TY - GEN
T1 - Concentration-dependent photoluminescence and Raman of p-type GaAs grown in a metallic-arsenic-based-MOCVD system
AU - Díaz-Reyes, J.
AU - Galván-Arellano, M.
AU - Peña-Sierra, R.
PY - 2008
Y1 - 2008
N2 - This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was used like transporting gas. The photoluminescence response and Raman dispersion of the layers are strongly dependence of the growth temperature, which were investigated based on the hole concentration. The PL response of the layers shows two radiative transitions, band-to-band and band-to-C-acceptor at low hole concentration and disappears at high concentrations. Raman scattering spectra show LO mode at 270 cm -1 for low doped samples and a LO-like mode at 290 cm-1 produced by the phonon-holeplasmon coupling for high doped samples.
AB - This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was used like transporting gas. The photoluminescence response and Raman dispersion of the layers are strongly dependence of the growth temperature, which were investigated based on the hole concentration. The PL response of the layers shows two radiative transitions, band-to-band and band-to-C-acceptor at low hole concentration and disappears at high concentrations. Raman scattering spectra show LO mode at 270 cm -1 for low doped samples and a LO-like mode at 290 cm-1 produced by the phonon-holeplasmon coupling for high doped samples.
KW - GaAs
KW - III-V alloy compound semiconductors
KW - MOCVD
KW - Phonon
KW - Photoluminescence
KW - Raman scattering
UR - http://www.scopus.com/inward/record.url?scp=60349118374&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/msf.587-588.283
DO - 10.4028/www.scientific.net/msf.587-588.283
M3 - Contribución a la conferencia
SN - 9780878493739
T3 - Materials Science Forum
SP - 283
EP - 287
BT - Advanced Materials Forum IV - Selected, peer reviewed papers from the IV International Materials Symposium Materiais 2007 and XIII Encontro da Sociedade Portuguesa de Materiais - SPM
A2 - Marques, Antonio Torres
A2 - Marques, Antonio Torres
A2 - Baptista, Antonio Paulo Monteiro
A2 - Silva, Antonio Fernando
A2 - Alves, Fernando Jorge Lino
A2 - Sa, Carlos
A2 - Malheiros, Luis Filipe
A2 - Vieira, Manuel
A2 - Vieira, Manuel
PB - Trans Tech Publications Ltd
T2 - Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM
Y2 - 1 April 2007 through 4 April 2007
ER -