Comparative investigation of optical and structural properties of porous SiC

M. M. Rodriguez, J. M. Rivas, A. D. Cano, T. V. Torchynska, J. P. Gomez, G. G. Gasga, S. J. Sandoval, M. Mynbaeva

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

2 Citas (Scopus)

Resumen

Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed.

Idioma originalInglés
Páginas (desde-hasta)494-498
Número de páginas5
PublicaciónMicroelectronics Journal
Volumen39
N.º3-4
DOI
EstadoPublicada - mar. 2008

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