Comparative investigation of optical and structural properties of porous SiC

M. M. Rodriguez; J. M. Rivas; A. D. Cano; T. V. Torchynska; J. P. Gomez; G. G. Gasga; S. J. Sandoval; M. Mynbaeva

doi:10.1016/j.mejo.2007.07.114

Comparative investigation of optical and structural properties of porous SiC

M. M. Rodriguez, J. M. Rivas, A. D. Cano, T. V. Torchynska, J. P. Gomez, G. G. Gasga, S. J. Sandoval, M. Mynbaeva

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed.

Original language	English
Pages (from-to)	494-498
Number of pages	5
Journal	Microelectronics Journal
Volume	39
Issue number	3-4
DOIs	https://doi.org/10.1016/j.mejo.2007.07.114
State	Published - Mar 2008

Keywords

AFM
Porous SiC
Raman scattering
SEM
X-ray diffraction

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10.1016/j.mejo.2007.07.114

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@article{114bb6b3b69b40eba3a10a4912316ffd,

title = "Comparative investigation of optical and structural properties of porous SiC",

abstract = "Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed.",

keywords = "AFM, Porous SiC, Raman scattering, SEM, X-ray diffraction",

author = "Rodriguez, {M. M.} and Rivas, {J. M.} and Cano, {A. D.} and Torchynska, {T. V.} and Gomez, {J. P.} and Gasga, {G. G.} and Sandoval, {S. J.} and M. Mynbaeva",

note = "Funding Information: This work was supported by SIP-IPN, Mexico. ",

year = "2008",

month = mar,

doi = "10.1016/j.mejo.2007.07.114",

language = "Ingl{\'e}s",

volume = "39",

pages = "494--498",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "3-4",

}

TY - JOUR

T1 - Comparative investigation of optical and structural properties of porous SiC

AU - Rodriguez, M. M.

AU - Rivas, J. M.

AU - Cano, A. D.

AU - Torchynska, T. V.

AU - Gomez, J. P.

AU - Gasga, G. G.

AU - Sandoval, S. J.

AU - Mynbaeva, M.

N1 - Funding Information: This work was supported by SIP-IPN, Mexico.

PY - 2008/3

Y1 - 2008/3

N2 - Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed.

AB - Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed.

KW - AFM

KW - Porous SiC

KW - Raman scattering

KW - SEM

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=40649113158&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2007.07.114

DO - 10.1016/j.mejo.2007.07.114

M3 - Artículo

SN - 0026-2692

VL - 39

SP - 494

EP - 498

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-4

ER -

Comparative investigation of optical and structural properties of porous SiC

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Keywords

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