Characterization of wurtzite type ZnS grown by RF magnetron sputtering

Joel Díaz-Reyes, Roberto S. Castillo-Ojeda, Javier Martínez-Juárez

Producción científica: Capítulo del libro/informe/acta de congresoCapítulorevisión exhaustiva

Resumen

ZnS was grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. ZnS chemical stoichiometry was determined by energydispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal crystalline phase wurtzite type. The average crystallite size range of the film was from 8.15 to 31.95 nm, which was determined using the Scherrer–Debye equation on diffractograms. Besides, an experimental study on first- and second-order Raman scattering of ZnS films is made. The observed emission peaks in the room temperature photoluminescence spectra are associated at oxygen traps and interstitial sulphur.

Idioma originalInglés
Título de la publicación alojadaMaterials Characterization
EditorialSpringer International Publishing
Páginas189-196
Número de páginas8
ISBN (versión digital)9783319152042
ISBN (versión impresa)9783319152035
DOI
EstadoPublicada - 1 ene. 2015

Huella

Profundice en los temas de investigación de 'Characterization of wurtzite type ZnS grown by RF magnetron sputtering'. En conjunto forman una huella única.

Citar esto