Characterization of wurtzite type ZnS grown by RF magnetron sputtering

Joel Díaz-Reyes; Roberto S. Castillo-Ojeda; Javier Martínez-Juárez

doi:10.1007/978-3-319-15204-2_19

Characterization of wurtzite type ZnS grown by RF magnetron sputtering

Joel Díaz-Reyes, Roberto S. Castillo-Ojeda, Javier Martínez-Juárez

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

ZnS was grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. ZnS chemical stoichiometry was determined by energydispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal crystalline phase wurtzite type. The average crystallite size range of the film was from 8.15 to 31.95 nm, which was determined using the Scherrer–Debye equation on diffractograms. Besides, an experimental study on first- and second-order Raman scattering of ZnS films is made. The observed emission peaks in the room temperature photoluminescence spectra are associated at oxygen traps and interstitial sulphur.

Original language	English
Title of host publication	Materials Characterization
Publisher	Springer International Publishing
Pages	189-196
Number of pages	8
ISBN (Electronic)	9783319152042
ISBN (Print)	9783319152035
DOIs	https://doi.org/10.1007/978-3-319-15204-2_19
State	Published - 1 Jan 2015

Keywords

Crystalline
Energy-dispersive x-ray spectroscopy (eds)
Rf magnetron sputtering
Wurtzite
Xrd

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10.1007/978-3-319-15204-2_19

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@inbook{3ab3df42152844868be3a51c30ecee8e,

title = "Characterization of wurtzite type ZnS grown by RF magnetron sputtering",

abstract = "ZnS was grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. ZnS chemical stoichiometry was determined by energydispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal crystalline phase wurtzite type. The average crystallite size range of the film was from 8.15 to 31.95 nm, which was determined using the Scherrer–Debye equation on diffractograms. Besides, an experimental study on first- and second-order Raman scattering of ZnS films is made. The observed emission peaks in the room temperature photoluminescence spectra are associated at oxygen traps and interstitial sulphur.",

keywords = "Crystalline, Energy-dispersive x-ray spectroscopy (eds), Rf magnetron sputtering, Wurtzite, Xrd",

author = "Joel D{\'i}az-Reyes and Castillo-Ojeda, {Roberto S.} and Javier Mart{\'i}nez-Ju{\'a}rez",

note = "Publisher Copyright: {\textcopyright} Springer International Publishing Switzerland 2015.",

year = "2015",

month = jan,

day = "1",

doi = "10.1007/978-3-319-15204-2_19",

language = "Ingl{\'e}s",

isbn = "9783319152035",

pages = "189--196",

booktitle = "Materials Characterization",

publisher = "Springer International Publishing",

}

TY - CHAP

T1 - Characterization of wurtzite type ZnS grown by RF magnetron sputtering

AU - Díaz-Reyes, Joel

AU - Castillo-Ojeda, Roberto S.

AU - Martínez-Juárez, Javier

N1 - Publisher Copyright: © Springer International Publishing Switzerland 2015.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - ZnS was grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. ZnS chemical stoichiometry was determined by energydispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal crystalline phase wurtzite type. The average crystallite size range of the film was from 8.15 to 31.95 nm, which was determined using the Scherrer–Debye equation on diffractograms. Besides, an experimental study on first- and second-order Raman scattering of ZnS films is made. The observed emission peaks in the room temperature photoluminescence spectra are associated at oxygen traps and interstitial sulphur.

AB - ZnS was grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. ZnS chemical stoichiometry was determined by energydispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal crystalline phase wurtzite type. The average crystallite size range of the film was from 8.15 to 31.95 nm, which was determined using the Scherrer–Debye equation on diffractograms. Besides, an experimental study on first- and second-order Raman scattering of ZnS films is made. The observed emission peaks in the room temperature photoluminescence spectra are associated at oxygen traps and interstitial sulphur.

KW - Crystalline

KW - Energy-dispersive x-ray spectroscopy (eds)

KW - Rf magnetron sputtering

KW - Wurtzite

KW - Xrd

UR - http://www.scopus.com/inward/record.url?scp=84943637493&partnerID=8YFLogxK

U2 - 10.1007/978-3-319-15204-2_19

DO - 10.1007/978-3-319-15204-2_19

M3 - Capítulo

SN - 9783319152035

SP - 189

EP - 196

BT - Materials Characterization

PB - Springer International Publishing

ER -

Characterization of wurtzite type ZnS grown by RF magnetron sputtering

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