Ingeniería y ciencia de los materiales
Carrier concentration
17%
Conduction bands
21%
Coulomb interactions
20%
Doping (additives)
56%
Epilayers
21%
Exchange interactions
23%
Impurities
12%
Liquid phase epitaxy
100%
Molar concentration
18%
Photoluminescence
61%
Raman scattering
36%
Raman spectroscopy
16%
Supercooling
18%
Tailings
16%
Tellurium
20%
Temperature
5%
Valence bands
22%
Zinc
13%
Química
Conduction Band
13%
Doping Material
44%
Energy
5%
Exchange Interaction
14%
Liquid Phase Epitaxy
82%
Mixture
5%
Photoluminescence
9%
Photoluminescence Spectrum
25%
Raman Spectroscopy
9%
Raman Spectrum
20%
Supercooling
17%
Valence Band
13%
Física y astronomía
characterization
28%
conduction
5%
energy
2%
estimates
4%
impurities
5%
interactions
6%
liquid phase epitaxy
60%
photoluminescence
17%
Raman spectra
13%
Raman spectroscopy
7%
shrinkage
8%
supercooling
9%
tellurium
9%
valence
6%
vibration mode
7%
zinc
7%