@inproceedings{5d7b54be5b5b44b8a0c9ed30ee0fe4f7,
title = "Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes",
abstract = "The parameters of the deep centers in MOCVD In0.53Ga0.47As layers and their dependence on electric field value and device topology on the wafers were studied by DLTS method in In0.53Ga0.47As/InP p-i-n photodiodes. The two deep centers with the activation energy E C -0.299 and 0.389 eV were discovered in depletion region of the p-i-n diodes. The latter defects are nonradiative recombination centers with strong electric field dependence of their activation energies and strong temperature dependence of the capture cross sections.",
author = "Torchinskaya, {Tatyana V.} and Kooshnirenko, {Volodya I.} and Shcherbina, {Ludmila V.} and Miner, {Carla J.}",
year = "1994",
language = "Ingl{\'e}s",
isbn = "081941669X",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "233--236",
editor = "Sabnis, {Anant G.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Manufacturing Process Control for Microelectronic Devices and Circuits ; Conference date: 20-10-1994 Through 21-10-1994",
}