(CdTe)_1-x(In₂Te₃)_x pseudo-binary in polycrystalline CdTe-In films

Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (α-phase) in all films, together with the CdIn₂Te₄ (β-phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In₂Te₃ in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution.