(CdTe)1-x(In2Te3)x pseudo-binary in polycrystalline CdTe-In films

R. Castro-Rodríguez; M. P. Hernández; M. Zapata-Torres; J. L. Peña

doi:10.1016/S0040-6090(00)01084-1

(CdTe)_1-x(In₂Te₃)_x pseudo-binary in polycrystalline CdTe-In films

R. Castro-Rodríguez, M. P. Hernández, M. Zapata-Torres, J. L. Peña

Research output: Contribution to journal › Article › peer-review

Abstract

Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (α-phase) in all films, together with the CdIn₂Te₄ (β-phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In₂Te₃ in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution.

Original language	English
Pages (from-to)	23-27
Number of pages	5
Journal	Thin Solid Films
Volume	373
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01084-1
State	Published - 3 Sep 2000
Externally published	Yes

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title = "(CdTe)1-x(In2Te3)x pseudo-binary in polycrystalline CdTe-In films",

abstract = "Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (α-phase) in all films, together with the CdIn2Te4 (β-phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution.",

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T1 - (CdTe)1-x(In2Te3)x pseudo-binary in polycrystalline CdTe-In films

AU - Castro-Rodríguez, R.

AU - P. Hernández, M.

AU - Zapata-Torres, M.

AU - Peña, J. L.

PY - 2000/9/3

Y1 - 2000/9/3

N2 - Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (α-phase) in all films, together with the CdIn2Te4 (β-phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution.

AB - Polycrystalline CdTe-In films were prepared using close-spaced vapor transport technique combined with free evaporation (CSVT-FE), and the stoichiometry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration in the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (α-phase) in all films, together with the CdIn2Te4 (β-phase) in the films grown at the highest temperatures of the In source. For low In concentration films, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution.

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U2 - 10.1016/S0040-6090(00)01084-1

DO - 10.1016/S0040-6090(00)01084-1

M3 - Artículo

SN - 0040-6090

VL - 373

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EP - 27

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

(CdTe)_1-x(In₂Te₃)_x pseudo-binary in polycrystalline CdTe-In films

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