CdS and CdTe large area thin films processed by radio-frequency planar-magnetron sputtering

H. Hernández-Contreras; G. Contreras-Puente; J. Aguilar-Hernández; A. Morales-Acevedo; J. Vidal-Larramendi; O. Vigil-Galán

doi:10.1016/S0040-6090(01)01523-1

CdS and CdTe large area thin films processed by radio-frequency planar-magnetron sputtering

Título traducido de la contribución: Películas delgadas de área grande de CdS y CdTe procesadas por pulverización catódica de magnetrón planar de radiofrecuencia

H. Hernández-Contreras, G. Contreras-Puente, J. Aguilar-Hernández, A. Morales-Acevedo, J. Vidal-Larramendi, O. Vigil-Galán

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

20 Citas (Scopus)

Resumen

We present in this work the processing of large area CdS and CdTe thin films. We have been working for this purpose with a Radio-Frequency Planar Magnetron Sputtering (RF-PMS) system with two 6-inch balanced guns, processing thin films in areas as large as 450 cm² grown on soda-lime glasses. Conducting glasses (SnO₂ of 7 Ω/□) were also used only for CdS deposition in order to further analyze the heterojunction CdS/CdTe. The best films have been processed with substrate temperatures (T_s) of 250°C for CdS and 215°C for CdTe; Ar chamber-pressure of 20 mtorr, radio frequency power of 300 W, and different deposition time between target materials.

Título traducido de la contribución	Películas delgadas de área grande de CdS y CdTe procesadas por pulverización catódica de magnetrón planar de radiofrecuencia
Idioma original	Inglés
Páginas (desde-hasta)	148-152
Número de páginas	5
Publicación	Thin Solid Films
Volumen	403-404
DOI	https://doi.org/10.1016/S0040-6090(01)01523-1
Estado	Publicada - 1 feb. 2002
Evento	Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS - Strasbourg, Francia Duración: 5 jun. 2001 → 8 jun. 2001

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title = "CdS and CdTe large area thin films processed by radio-frequency planar-magnetron sputtering",

abstract = "We present in this work the processing of large area CdS and CdTe thin films. We have been working for this purpose with a Radio-Frequency Planar Magnetron Sputtering (RF-PMS) system with two 6-inch balanced guns, processing thin films in areas as large as 450 cm2 grown on soda-lime glasses. Conducting glasses (SnO2 of 7 Ω/□) were also used only for CdS deposition in order to further analyze the heterojunction CdS/CdTe. The best films have been processed with substrate temperatures (Ts) of 250°C for CdS and 215°C for CdTe; Ar chamber-pressure of 20 mtorr, radio frequency power of 300 W, and different deposition time between target materials.",

keywords = "CdS, CdTe, Optical absorbtion, Photoluminescence, Radio-frequency planar-magnetron sputtering, Resistivity, X-rays",

author = "H. Hern{\'a}ndez-Contreras and G. Contreras-Puente and J. Aguilar-Hern{\'a}ndez and A. Morales-Acevedo and J. Vidal-Larramendi and O. Vigil-Gal{\'a}n",

note = "Funding Information: This work was partially supported by CONACyT-Mexico.; Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS ; Conference date: 05-06-2001 Through 08-06-2001",

year = "2002",

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day = "1",

doi = "10.1016/S0040-6090(01)01523-1",

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T1 - CdS and CdTe large area thin films processed by radio-frequency planar-magnetron sputtering

AU - Hernández-Contreras, H.

AU - Contreras-Puente, G.

AU - Aguilar-Hernández, J.

AU - Morales-Acevedo, A.

AU - Vidal-Larramendi, J.

AU - Vigil-Galán, O.

N1 - Funding Information: This work was partially supported by CONACyT-Mexico.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - We present in this work the processing of large area CdS and CdTe thin films. We have been working for this purpose with a Radio-Frequency Planar Magnetron Sputtering (RF-PMS) system with two 6-inch balanced guns, processing thin films in areas as large as 450 cm2 grown on soda-lime glasses. Conducting glasses (SnO2 of 7 Ω/□) were also used only for CdS deposition in order to further analyze the heterojunction CdS/CdTe. The best films have been processed with substrate temperatures (Ts) of 250°C for CdS and 215°C for CdTe; Ar chamber-pressure of 20 mtorr, radio frequency power of 300 W, and different deposition time between target materials.

AB - We present in this work the processing of large area CdS and CdTe thin films. We have been working for this purpose with a Radio-Frequency Planar Magnetron Sputtering (RF-PMS) system with two 6-inch balanced guns, processing thin films in areas as large as 450 cm2 grown on soda-lime glasses. Conducting glasses (SnO2 of 7 Ω/□) were also used only for CdS deposition in order to further analyze the heterojunction CdS/CdTe. The best films have been processed with substrate temperatures (Ts) of 250°C for CdS and 215°C for CdTe; Ar chamber-pressure of 20 mtorr, radio frequency power of 300 W, and different deposition time between target materials.

KW - CdS

KW - CdTe

KW - Optical absorbtion

KW - Photoluminescence

KW - Radio-frequency planar-magnetron sputtering

KW - Resistivity

KW - X-rays

UR - http://www.scopus.com/inward/record.url?scp=0037956335&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01523-1

DO - 10.1016/S0040-6090(01)01523-1

M3 - Artículo de la conferencia

AN - SCOPUS:0037956335

SN - 0040-6090

VL - 403-404

SP - 148

EP - 152

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS

Y2 - 5 June 2001 through 8 June 2001

ER -

CdS and CdTe large area thin films processed by radio-frequency planar-magnetron sputtering

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