Boundary conditions for thermoelectric cooling in p-n junction

Igor Lashkevych; Yury G. Gurevich

doi:10.1007/s10765-011-0969-z

Boundary conditions for thermoelectric cooling in p-n junction

Igor Lashkevych, Yury G. Gurevich

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

6 Citas (Scopus)

Resumen

The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.

Idioma original	Inglés
Páginas (desde-hasta)	1086-1097
Número de páginas	12
Publicación	International Journal of Thermophysics
Volumen	32
N.º	5
DOI	https://doi.org/10.1007/s10765-011-0969-z
Estado	Publicada - may. 2011

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title = "Boundary conditions for thermoelectric cooling in p-n junction",

abstract = "The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.",

keywords = "Cooling, Heating, Nonequilibrium carriers, Peltier phenomena, Recombination",

author = "Igor Lashkevych and Gurevich, {Yury G.}",

note = "Funding Information: Acknowledgments Authors wish to thank CONACYT-Mexico for partial financial support. One of the authors (Y. G. G.) also thanks Prof. E. Velazquez-Perez for hospitality. I. L. thanks SIP-IPN, Mexico for partial financial support.",

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T1 - Boundary conditions for thermoelectric cooling in p-n junction

AU - Lashkevych, Igor

AU - Gurevich, Yury G.

N1 - Funding Information: Acknowledgments Authors wish to thank CONACYT-Mexico for partial financial support. One of the authors (Y. G. G.) also thanks Prof. E. Velazquez-Perez for hospitality. I. L. thanks SIP-IPN, Mexico for partial financial support.

PY - 2011/5

Y1 - 2011/5

N2 - The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.

AB - The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.

KW - Cooling

KW - Heating

KW - Nonequilibrium carriers

KW - Peltier phenomena

KW - Recombination

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DO - 10.1007/s10765-011-0969-z

M3 - Artículo

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VL - 32

SP - 1086

EP - 1097

JO - International Journal of Thermophysics

JF - International Journal of Thermophysics

IS - 5

ER -

Boundary conditions for thermoelectric cooling in p-n junction

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