Boundary conditions for thermoelectric cooling in p-n junction

Igor Lashkevych; Yury G. Gurevich

doi:10.1007/s10765-011-0969-z

Boundary conditions for thermoelectric cooling in p-n junction

Igor Lashkevych, Yury G. Gurevich

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.

Original language	English
Pages (from-to)	1086-1097
Number of pages	12
Journal	International Journal of Thermophysics
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s10765-011-0969-z
State	Published - May 2011

Keywords

Cooling
Heating
Nonequilibrium carriers
Peltier phenomena
Recombination

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title = "Boundary conditions for thermoelectric cooling in p-n junction",

abstract = "The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.",

keywords = "Cooling, Heating, Nonequilibrium carriers, Peltier phenomena, Recombination",

author = "Igor Lashkevych and Gurevich, {Yury G.}",

note = "Funding Information: Acknowledgments Authors wish to thank CONACYT-Mexico for partial financial support. One of the authors (Y. G. G.) also thanks Prof. E. Velazquez-Perez for hospitality. I. L. thanks SIP-IPN, Mexico for partial financial support.",

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AU - Lashkevych, Igor

AU - Gurevich, Yury G.

N1 - Funding Information: Acknowledgments Authors wish to thank CONACYT-Mexico for partial financial support. One of the authors (Y. G. G.) also thanks Prof. E. Velazquez-Perez for hospitality. I. L. thanks SIP-IPN, Mexico for partial financial support.

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Y1 - 2011/5

N2 - The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.

AB - The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p-n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.

KW - Cooling

KW - Heating

KW - Nonequilibrium carriers

KW - Peltier phenomena

KW - Recombination

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DO - 10.1007/s10765-011-0969-z

M3 - Artículo

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VL - 32

SP - 1086

EP - 1097

JO - International Journal of Thermophysics

JF - International Journal of Thermophysics

IS - 5

ER -

Boundary conditions for thermoelectric cooling in p-n junction

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Keywords

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