TY - JOUR
T1 - Ballistic effect and new concept of Si wire photoluminescence
AU - Torchynska, T. V.
AU - Vorobiev, Yu V.
N1 - Funding Information:
This work was partially supported by CONACYT (Projects 33427-U and 33901-U), and CGPI–IPN Mexico.
PY - 2003/4
Y1 - 2003/4
N2 - The photoluminescence, photoluminescence excitation, infrared absorption and Raman scattering spectra of as-prepared Si wires, like porous silicon (PSi), are examined in dependence on technological regimes. Atomic force microscopy (AFM) is used for investigation of surface morphology and its connection with the photoluminescence (PL) peculiarities. The experimental data are analyzed from the point of view of new concept of Si wire photoluminescence, based on the electron ballistic effect in photoluminescence excitation of Si/SiOx interface defect-related photoluminescence.
AB - The photoluminescence, photoluminescence excitation, infrared absorption and Raman scattering spectra of as-prepared Si wires, like porous silicon (PSi), are examined in dependence on technological regimes. Atomic force microscopy (AFM) is used for investigation of surface morphology and its connection with the photoluminescence (PL) peculiarities. The experimental data are analyzed from the point of view of new concept of Si wire photoluminescence, based on the electron ballistic effect in photoluminescence excitation of Si/SiOx interface defect-related photoluminescence.
KW - Ballistic effect
KW - Photoluminescence
KW - Silicon wires
KW - Surface morphology
UR - http://www.scopus.com/inward/record.url?scp=0037393442&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(03)00019-4
DO - 10.1016/S0167-9317(03)00019-4
M3 - Artículo de la conferencia
AN - SCOPUS:0037393442
SN - 0167-9317
VL - 66
SP - 17
EP - 25
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
T2 - IUMRS-ICEM 2002
Y2 - 10 June 2002 through 14 June 2002
ER -