Ballistic effect and new concept of Si wire photoluminescence

T. V. Torchynska; Yu V. Vorobiev

doi:10.1016/S0167-9317(03)00019-4

Ballistic effect and new concept of Si wire photoluminescence

T. V. Torchynska, Yu V. Vorobiev

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The photoluminescence, photoluminescence excitation, infrared absorption and Raman scattering spectra of as-prepared Si wires, like porous silicon (PSi), are examined in dependence on technological regimes. Atomic force microscopy (AFM) is used for investigation of surface morphology and its connection with the photoluminescence (PL) peculiarities. The experimental data are analyzed from the point of view of new concept of Si wire photoluminescence, based on the electron ballistic effect in photoluminescence excitation of Si/SiO_x interface defect-related photoluminescence.

Translated title of the contribution	Efecto balístico y nuevo concepto de fotoluminiscencia de hilo de Si
Original language	English
Pages (from-to)	17-25
Number of pages	9
Journal	Microelectronic Engineering
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(03)00019-4
State	Published - Apr 2003
Event	IUMRS-ICEM 2002 - Xi an, China Duration: 10 Jun 2002 → 14 Jun 2002

Keywords

Ballistic effect
Photoluminescence
Silicon wires
Surface morphology

Access to Document

10.1016/S0167-9317(03)00019-4

Cite this

@article{b0421b6b89e14b4d86a17d5fcdf1716a,

title = "Ballistic effect and new concept of Si wire photoluminescence",

abstract = "The photoluminescence, photoluminescence excitation, infrared absorption and Raman scattering spectra of as-prepared Si wires, like porous silicon (PSi), are examined in dependence on technological regimes. Atomic force microscopy (AFM) is used for investigation of surface morphology and its connection with the photoluminescence (PL) peculiarities. The experimental data are analyzed from the point of view of new concept of Si wire photoluminescence, based on the electron ballistic effect in photoluminescence excitation of Si/SiOx interface defect-related photoluminescence.",

keywords = "Ballistic effect, Photoluminescence, Silicon wires, Surface morphology",

author = "Torchynska, {T. V.} and Vorobiev, {Yu V.}",

note = "Funding Information: This work was partially supported by CONACYT (Projects 33427-U and 33901-U), and CGPI–IPN Mexico.; IUMRS-ICEM 2002 ; Conference date: 10-06-2002 Through 14-06-2002",

year = "2003",

month = apr,

doi = "10.1016/S0167-9317(03)00019-4",

language = "Ingl{\'e}s",

volume = "66",

pages = "17--25",

journal = "Microelectronic Engineering",

issn = "0167-9317",

number = "1-4",

}

TY - JOUR

T1 - Ballistic effect and new concept of Si wire photoluminescence

AU - Torchynska, T. V.

AU - Vorobiev, Yu V.

N1 - Funding Information: This work was partially supported by CONACYT (Projects 33427-U and 33901-U), and CGPI–IPN Mexico.

PY - 2003/4

Y1 - 2003/4

N2 - The photoluminescence, photoluminescence excitation, infrared absorption and Raman scattering spectra of as-prepared Si wires, like porous silicon (PSi), are examined in dependence on technological regimes. Atomic force microscopy (AFM) is used for investigation of surface morphology and its connection with the photoluminescence (PL) peculiarities. The experimental data are analyzed from the point of view of new concept of Si wire photoluminescence, based on the electron ballistic effect in photoluminescence excitation of Si/SiOx interface defect-related photoluminescence.

AB - The photoluminescence, photoluminescence excitation, infrared absorption and Raman scattering spectra of as-prepared Si wires, like porous silicon (PSi), are examined in dependence on technological regimes. Atomic force microscopy (AFM) is used for investigation of surface morphology and its connection with the photoluminescence (PL) peculiarities. The experimental data are analyzed from the point of view of new concept of Si wire photoluminescence, based on the electron ballistic effect in photoluminescence excitation of Si/SiOx interface defect-related photoluminescence.

KW - Ballistic effect

KW - Photoluminescence

KW - Silicon wires

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=0037393442&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(03)00019-4

DO - 10.1016/S0167-9317(03)00019-4

M3 - Artículo de la conferencia

AN - SCOPUS:0037393442

SN - 0167-9317

VL - 66

SP - 17

EP - 25

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - IUMRS-ICEM 2002

Y2 - 10 June 2002 through 14 June 2002

ER -

Ballistic effect and new concept of Si wire photoluminescence

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this