Atomic Layer Epitaxy by isothermal closed space sublimation

O. De Melo; E. Purón; M. Sánchez; E. Larramendi; L. C. Hernández; S. Tobeñas; M. Tamura; F. Cruz-Gandarilla; M. Hesiquio Garduño

doi:10.1142/S0217984901002051

Atomic Layer Epitaxy by isothermal closed space sublimation

Título traducido de la contribución: Epitaxia de capa atómica por sublimación isotérmica en espacio cerrado

O. De Melo, E. Purón, M. Sánchez, E. Larramendi, L. C. Hernández, S. Tobeñas, M. Tamura, F. Cruz-Gandarilla, M. Hesiquio Garduño

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Resumen

Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and Cd_xZn_1-xTe and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary Cd_xZn_1-xTe alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.

Título traducido de la contribución	Epitaxia de capa atómica por sublimación isotérmica en espacio cerrado
Idioma original	Inglés
Páginas (desde-hasta)	579-584
Número de páginas	6
Publicación	Modern Physics Letters B
Volumen	15
N.º	17-19
DOI	https://doi.org/10.1142/S0217984901002051
Estado	Publicada - 20 ago. 2001

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@article{4f552d9029954f5cbedbc1d3cf18f9d1,

title = "Atomic Layer Epitaxy by isothermal closed space sublimation",

abstract = "Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and CdxZn1-xTe and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary CdxZn1-xTe alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.",

author = "{De Melo}, O. and E. Pur{\'o}n and M. S{\'a}nchez and E. Larramendi and Hern{\'a}ndez, {L. C.} and S. Tobe{\~n}as and M. Tamura and F. Cruz-Gandarilla and Gardu{\~n}o, {M. Hesiquio}",

note = "Funding Information: The authors acknowledge the Alma Mater grant from the University of Havana. MT thanks to the Patrimonial Cathedra program of CONACyT. We also thank M. Guerrero and S. De Roux for technical assistance.",

year = "2001",

month = aug,

day = "20",

doi = "10.1142/S0217984901002051",

language = "Ingl{\'e}s",

volume = "15",

pages = "579--584",

journal = "Modern Physics Letters B",

issn = "0217-9849",

number = "17-19",

}

TY - JOUR

T1 - Atomic Layer Epitaxy by isothermal closed space sublimation

AU - De Melo, O.

AU - Purón, E.

AU - Sánchez, M.

AU - Larramendi, E.

AU - Hernández, L. C.

AU - Tobeñas, S.

AU - Tamura, M.

AU - Cruz-Gandarilla, F.

AU - Garduño, M. Hesiquio

N1 - Funding Information: The authors acknowledge the Alma Mater grant from the University of Havana. MT thanks to the Patrimonial Cathedra program of CONACyT. We also thank M. Guerrero and S. De Roux for technical assistance.

PY - 2001/8/20

Y1 - 2001/8/20

N2 - Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and CdxZn1-xTe and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary CdxZn1-xTe alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.

AB - Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and CdxZn1-xTe and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary CdxZn1-xTe alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.

UR - http://www.scopus.com/inward/record.url?scp=0035921482&partnerID=8YFLogxK

U2 - 10.1142/S0217984901002051

DO - 10.1142/S0217984901002051

M3 - Artículo

AN - SCOPUS:0035921482

SN - 0217-9849

VL - 15

SP - 579

EP - 584

JO - Modern Physics Letters B

JF - Modern Physics Letters B

IS - 17-19

ER -

Atomic Layer Epitaxy by isothermal closed space sublimation

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