TY - JOUR
T1 - Atomic Layer Epitaxy by isothermal closed space sublimation
AU - De Melo, O.
AU - Purón, E.
AU - Sánchez, M.
AU - Larramendi, E.
AU - Hernández, L. C.
AU - Tobeñas, S.
AU - Tamura, M.
AU - Cruz-Gandarilla, F.
AU - Garduño, M. Hesiquio
N1 - Funding Information:
The authors acknowledge the Alma Mater grant from the University of Havana. MT thanks to the Patrimonial Cathedra program of CONACyT. We also thank M. Guerrero and S. De Roux for technical assistance.
PY - 2001/8/20
Y1 - 2001/8/20
N2 - Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and CdxZn1-xTe and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary CdxZn1-xTe alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.
AB - Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and CdxZn1-xTe and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary CdxZn1-xTe alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.
UR - http://www.scopus.com/inward/record.url?scp=0035921482&partnerID=8YFLogxK
U2 - 10.1142/S0217984901002051
DO - 10.1142/S0217984901002051
M3 - Artículo
AN - SCOPUS:0035921482
SN - 0217-9849
VL - 15
SP - 579
EP - 584
JO - Modern Physics Letters B
JF - Modern Physics Letters B
IS - 17-19
ER -