TY - JOUR
T1 - Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP/InGaAs HBTs
AU - Ramirez-Garcia, E.
AU - Aniel, F. P.
AU - Enciso-Aguilar, M. A.
AU - Zerounian, F.
PY - 2012/8
Y1 - 2012/8
N2 - We present an original and reliable technique to elucidate the different contributions to the apparent base resistance (R B= R Bx+XR Bi) of double heterojunction bipolar transistors (HBTs) designed by Alcatel-Thales IIIV Lab. The extrinsic base resistance (R Bx) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi) are extracted from high-frequency noise (HFN) measurements. This method was applied to three InP/InGaAs HBTs having different emitter surfaces (S E). The correct determination of R Bx, X and R Bimay be a useful tool for compact and/or linear electrical modelling and may give some guidelines to designers to improve operation frequencies. Moreover, this strategy can be applied to any layout and technological variation of HBT; it can be also applied to homojunction bipolar transistors. Our results show that HFN analysis should be included to fully characterize bipolar transistors.
AB - We present an original and reliable technique to elucidate the different contributions to the apparent base resistance (R B= R Bx+XR Bi) of double heterojunction bipolar transistors (HBTs) designed by Alcatel-Thales IIIV Lab. The extrinsic base resistance (R Bx) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi) are extracted from high-frequency noise (HFN) measurements. This method was applied to three InP/InGaAs HBTs having different emitter surfaces (S E). The correct determination of R Bx, X and R Bimay be a useful tool for compact and/or linear electrical modelling and may give some guidelines to designers to improve operation frequencies. Moreover, this strategy can be applied to any layout and technological variation of HBT; it can be also applied to homojunction bipolar transistors. Our results show that HFN analysis should be included to fully characterize bipolar transistors.
UR - http://www.scopus.com/inward/record.url?scp=84862230170&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/27/8/085005
DO - 10.1088/0268-1242/27/8/085005
M3 - Artículo
SN - 0268-1242
VL - 27
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 8
M1 - 085005
ER -