@inproceedings{83a9a16fff224c81bea434d2d2ebe8f9,
title = "A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates",
abstract = "The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al 2O 3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to And the best experimental conditions for obtain c-GaN films with good properties.",
keywords = "GaAs, GaN films, MOVPE, Sapphire",
author = "C. Guarneros and H. Vilchis and S{\'a}nchez, {V. M.} and A. Escobosa",
year = "2008",
doi = "10.1109/ICEEE.2008.4723459",
language = "Ingl{\'e}s",
isbn = "9781424424993",
series = "2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008",
pages = "478--480",
booktitle = "2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008",
note = "2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008 ; Conference date: 12-11-2008 Through 14-11-2008",
}