A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates

C. Guarneros; H. Vilchis; V. M. Sánchez; A. Escobosa

doi:10.1109/ICEEE.2008.4723459

A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates

C. Guarneros, H. Vilchis, V. M. Sánchez, A. Escobosa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al ₂O ₃) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to And the best experimental conditions for obtain c-GaN films with good properties.

Original language	English
Title of host publication	2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008
Pages	478-480
Number of pages	3
DOIs	https://doi.org/10.1109/ICEEE.2008.4723459
State	Published - 2008
Externally published	Yes
Event	2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008 - Mexico City, Mexico Duration: 12 Nov 2008 → 14 Nov 2008

Publication series

Name	2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008

Conference

Conference	2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008
Country/Territory	Mexico
City	Mexico City
Period	12/11/08 → 14/11/08

Keywords

GaAs
GaN films
MOVPE
Sapphire

Access to Document

10.1109/ICEEE.2008.4723459

Cite this

Guarneros, C., Vilchis, H., Sánchez, V. M., & Escobosa, A. (2008). A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. In 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008 (pp. 478-480). Article 4723459 (2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008). https://doi.org/10.1109/ICEEE.2008.4723459

Guarneros, C. ; Vilchis, H. ; Sánchez, V. M. et al. / A comparative analysis of synthesizing Gallium Nitride films : On Gallium Arsenide and Sapphire substrates. 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008. 2008. pp. 478-480 (2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008).

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title = "A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates",

abstract = "The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al 2O 3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to And the best experimental conditions for obtain c-GaN films with good properties.",

keywords = "GaAs, GaN films, MOVPE, Sapphire",

author = "C. Guarneros and H. Vilchis and S{\'a}nchez, {V. M.} and A. Escobosa",

year = "2008",

doi = "10.1109/ICEEE.2008.4723459",

language = "Ingl{\'e}s",

isbn = "9781424424993",

series = "2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008",

pages = "478--480",

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Guarneros, C, Vilchis, H, Sánchez, VM & Escobosa, A 2008, A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. in 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008., 4723459, 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008, pp. 478-480, 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008, Mexico City, Mexico, 12/11/08. https://doi.org/10.1109/ICEEE.2008.4723459

A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. / Guarneros, C.; Vilchis, H.; Sánchez, V. M. et al.
2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008. 2008. p. 478-480 4723459 (2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Guarneros C, Vilchis H, Sánchez VM, Escobosa A. A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. In 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008. 2008. p. 478-480. 4723459. (2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008). doi: 10.1109/ICEEE.2008.4723459

A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates

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