A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

J. J. Ocampo-Hidalgo; J. Alducín-Castillo; I. Vázquez-Álvarez; L. N. Oliva-Moreno; J. E. Molinar-Solís

doi:10.1142/S0218126618501116

A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

J. J. Ocampo-Hidalgo, J. Alducín-Castillo, I. Vázquez-Álvarez, L. N. Oliva-Moreno, J. E. Molinar-Solís

Unidad Profesional Interdisciplinaria de Ingeniería, Campus Hidalgo (UPIIH)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

8 Citas (Scopus)

Resumen

A quasi-floating gate (QFG) "super-follower" is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.

Idioma original	Inglés
Número de artículo	1850111
Publicación	Journal of Circuits, Systems and Computers
Volumen	27
N.º	7
DOI	https://doi.org/10.1142/S0218126618501116
Estado	Publicada - 30 jun. 2018

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abstract = "A quasi-floating gate (QFG) {"}super-follower{"} is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.",

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AU - Ocampo-Hidalgo, J. J.

AU - Alducín-Castillo, J.

AU - Vázquez-Álvarez, I.

AU - Oliva-Moreno, L. N.

AU - Molinar-Solís, J. E.

PY - 2018/6/30

Y1 - 2018/6/30

N2 - A quasi-floating gate (QFG) "super-follower" is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.

AB - A quasi-floating gate (QFG) "super-follower" is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.

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KW - Quasi-floating gate circuits

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A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

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