A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

J. J. Ocampo-Hidalgo; J. Alducín-Castillo; I. Vázquez-Álvarez; L. N. Oliva-Moreno; J. E. Molinar-Solís

doi:10.1142/S0218126618501116

A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

J. J. Ocampo-Hidalgo, J. Alducín-Castillo, I. Vázquez-Álvarez, L. N. Oliva-Moreno, J. E. Molinar-Solís

Unidad Profesional Interdisciplinaria de Ingeniería, Campus Hidalgo (UPIIH)

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A quasi-floating gate (QFG) "super-follower" is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.

Original language	English
Article number	1850111
Journal	Journal of Circuits, Systems and Computers
Volume	27
Issue number	7
DOIs	https://doi.org/10.1142/S0218126618501116
State	Published - 30 Jun 2018

Keywords

CMOS analog integrated circuits
Quasi-floating gate circuits
low voltage circuits

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10.1142/S0218126618501116

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title = "A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques",

abstract = "A quasi-floating gate (QFG) {"}super-follower{"} is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.",

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T1 - A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

AU - Ocampo-Hidalgo, J. J.

AU - Alducín-Castillo, J.

AU - Vázquez-Álvarez, I.

AU - Oliva-Moreno, L. N.

AU - Molinar-Solís, J. E.

PY - 2018/6/30

Y1 - 2018/6/30

N2 - A quasi-floating gate (QFG) "super-follower" is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.

AB - A quasi-floating gate (QFG) "super-follower" is presented. The high resistance used by the QFG transistor is constructed by two diodes connected back-to-back, leading to a simple-, temperature-stable- and small-area solution. Expressions for the behavior of the follower are introduced and verified by circuit simulations in LTSPICE using 0.5μm CMOS process models, which show an improved performance of the proposed circuit with respect to the original super-follower. To prove the principle, a test cell was fabricated in the same 0.5μm CMOS technology and characterized. Measurement results show a gain-bandwidth product of 10MHz and power consumption of 120μW with a 1.5V single supply.

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KW - Quasi-floating gate circuits

KW - low voltage circuits

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A CMOS Low-Voltage Super Follower Using Quasi-Floating Gate Techniques

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Keywords

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