3-layered capacitive structure design for MEMS inertial sensing

B. Granados-Rojas, M. A. Reyes-Barranca, G. S. Abarca-Jimenez, L. M. Flores-Nava, J. A. Moreno-Cadenas

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

9 Citas (Scopus)

Resumen

In this paper a two-Terminal capacitive structure is presented in which a novel architecture with a double interleaved (interdigitated) scheme is introduced. This structure was originally conceived as a mechanism to achieve a greater capacitance between the plates (terminals) of an integrated capacitor using a relatively smaller design area in the standard 0.5μm, two polysilicon and three metal layers (2P3M) CMOS technology. This work presents the design and theoretical analysis of a three-metal interleaved structure used as a varactor tied down to the proof mass of an integrated CMOS-MEMS accelerometer where the active devices are floating-gate transistors (FGMOS) with a variable capacitive coupling coefficient. Nevertheless, the three-layered geometrical scheme may have a wide range of applications across the MEMS technology.

Idioma originalInglés
Título de la publicación alojada2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781509035106
DOI
EstadoPublicada - 21 nov. 2016
Publicado de forma externa
Evento13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016 - Mexico City, México
Duración: 26 sep. 201630 sep. 2016

Serie de la publicación

Nombre2016 13th International Conference on Electrical Engineering,Computing Science and Automatic Control, CCE 2016

Conferencia

Conferencia13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016
País/TerritorioMéxico
CiudadMexico City
Período26/09/1630/09/16

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