3-layered capacitive structure design for MEMS inertial sensing

B. Granados-Rojas, M. A. Reyes-Barranca, G. S. Abarca-Jimenez, L. M. Flores-Nava, J. A. Moreno-Cadenas

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

In this paper a two-Terminal capacitive structure is presented in which a novel architecture with a double interleaved (interdigitated) scheme is introduced. This structure was originally conceived as a mechanism to achieve a greater capacitance between the plates (terminals) of an integrated capacitor using a relatively smaller design area in the standard 0.5μm, two polysilicon and three metal layers (2P3M) CMOS technology. This work presents the design and theoretical analysis of a three-metal interleaved structure used as a varactor tied down to the proof mass of an integrated CMOS-MEMS accelerometer where the active devices are floating-gate transistors (FGMOS) with a variable capacitive coupling coefficient. Nevertheless, the three-layered geometrical scheme may have a wide range of applications across the MEMS technology.

Original languageEnglish
Title of host publication2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509035106
DOIs
StatePublished - 21 Nov 2016
Externally publishedYes
Event13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016 - Mexico City, Mexico
Duration: 26 Sep 201630 Sep 2016

Publication series

Name2016 13th International Conference on Electrical Engineering,Computing Science and Automatic Control, CCE 2016

Conference

Conference13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016
Country/TerritoryMexico
CityMexico City
Period26/09/1630/09/16

Keywords

  • CMOS-MEMS
  • COMSOL
  • FGMOS
  • capacitive MEMS
  • capacitive sensing
  • floating-gate

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