0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs

M. Enciso; F. Aniel; P. Crozat; R. Adde; M. Zeuner; A. Fox; T. Hackbarth

doi:10.1049/el:20010708

0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si_0.58Ge_0.42 n-MODFETs

M. Enciso, F. Aniel, P. Crozat, R. Adde, M. Zeuner, A. Fox, T. Hackbarth

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

23 Citas (Scopus)

Resumen

RF and microwave noise performances of strained Si/Si_0.58Ge_0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded f_T = 49 GHz, f_max = 70 GHz and a record intrinsic g_m = 700 mS/mm. A de-embedded minimum noise figure NF_min = 0.3 dB with a 41 Ω noise resistance R_n and a 19 dB associated gain G_ass are obtained at 2.5 GHz, while NF_min = 2.0 dB with G_ass = 10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications.

Idioma original	Inglés
Páginas (desde-hasta)	1089-1090
Número de páginas	2
Publicación	Electronics Letters
Volumen	37
N.º	17
DOI	https://doi.org/10.1049/el:20010708
Estado	Publicada - 16 ago. 2001
Publicado de forma externa	Sí

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@article{ed8dbc3361854ee9bcca7822fda3c168,

title = "0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs",

abstract = "RF and microwave noise performances of strained Si/Si0.58Ge0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded fT = 49 GHz, fmax = 70 GHz and a record intrinsic gm = 700 mS/mm. A de-embedded minimum noise figure NFmin = 0.3 dB with a 41 Ω noise resistance Rn and a 19 dB associated gain Gass are obtained at 2.5 GHz, while NFmin = 2.0 dB with Gass = 10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications.",

author = "M. Enciso and F. Aniel and P. Crozat and R. Adde and M. Zeuner and A. Fox and T. Hackbarth",

year = "2001",

month = aug,

day = "16",

doi = "10.1049/el:20010708",

language = "Ingl{\'e}s",

volume = "37",

pages = "1089--1090",

journal = "Electronics Letters",

issn = "0013-5194",

number = "17",

}

TY - JOUR

T1 - 0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs

AU - Enciso, M.

AU - Aniel, F.

AU - Crozat, P.

AU - Adde, R.

AU - Zeuner, M.

AU - Fox, A.

AU - Hackbarth, T.

PY - 2001/8/16

Y1 - 2001/8/16

N2 - RF and microwave noise performances of strained Si/Si0.58Ge0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded fT = 49 GHz, fmax = 70 GHz and a record intrinsic gm = 700 mS/mm. A de-embedded minimum noise figure NFmin = 0.3 dB with a 41 Ω noise resistance Rn and a 19 dB associated gain Gass are obtained at 2.5 GHz, while NFmin = 2.0 dB with Gass = 10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications.

AB - RF and microwave noise performances of strained Si/Si0.58Ge0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded fT = 49 GHz, fmax = 70 GHz and a record intrinsic gm = 700 mS/mm. A de-embedded minimum noise figure NFmin = 0.3 dB with a 41 Ω noise resistance Rn and a 19 dB associated gain Gass are obtained at 2.5 GHz, while NFmin = 2.0 dB with Gass = 10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications.

UR - http://www.scopus.com/inward/record.url?scp=0035899208&partnerID=8YFLogxK

U2 - 10.1049/el:20010708

DO - 10.1049/el:20010708

M3 - Artículo

SN - 0013-5194

VL - 37

SP - 1089

EP - 1090

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -