Abstract
RF and microwave noise performances of strained Si/Si0.58Ge0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded fT = 49 GHz, fmax = 70 GHz and a record intrinsic gm = 700 mS/mm. A de-embedded minimum noise figure NFmin = 0.3 dB with a 41 Ω noise resistance Rn and a 19 dB associated gain Gass are obtained at 2.5 GHz, while NFmin = 2.0 dB with Gass = 10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications.
Original language | English |
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Pages (from-to) | 1089-1090 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 37 |
Issue number | 17 |
DOIs | |
State | Published - 16 Aug 2001 |
Externally published | Yes |