Upper value of thermoelectric figure of merit for isotropic semiconductors

G. Logvinov, Y. Gurevich, R. V. Medina

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Within the framework of two-temperature model (electron and phonon temperature) the problem of thermoelectric figure of merit in semiconductor layers is theoretically investigated. It is shown, that it reaches the maximal value in semiconductor films with thickness smaller of a cooling length. Increase of the thermoelectric figure of merit in this case is caused by "switching-off" of the phonon subsystem in the general process of heat conductivity due to the special boundary conditions for electron and phonon subsystems.

Original languageEnglish
Title of host publicationProceedings ICT 2003 - 22nd International Conference on Thermoelectrics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages452-455
Number of pages4
ISBN (Electronic)078038301X
DOIs
StatePublished - 2003
Event22nd International Conference on Thermoelectrics, ICT 2003 - La Grande Motte, France
Duration: 17 Aug 200321 Aug 2003

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings
Volume2003-January

Conference

Conference22nd International Conference on Thermoelectrics, ICT 2003
Country/TerritoryFrance
CityLa Grande Motte
Period17/08/0321/08/03

Keywords

  • Cooling
  • Electronic mail
  • Electrons
  • Heat engines
  • Magneto electrical resistivity imaging technique
  • Phonons
  • Resistance heating
  • Temperature
  • Thermal conductivity
  • Thermoelectricity

Fingerprint

Dive into the research topics of 'Upper value of thermoelectric figure of merit for isotropic semiconductors'. Together they form a unique fingerprint.

Cite this