Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

T. V. Torchynska, J. L. Casas Espinola, E. Velásquez Losada, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra

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Abstract

The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.85As multi-quantum-well (MQW) heterostructures have been investigated at variable temperatures. This paper presents the PL bands, connected with ground (GS) and multi-excited states (ES) in QDs. Not equidistant optical transitions have been revealed. Spectral peak shifts and PL intensity variations in the temperature range 12-220 K for all PL bands are analyzed. The activation energy of the temperature quenching processes for GS and 4 ES optical transitions in InAs QDs are measured. The mechanism of these processes and the positions of the energy levels in QDs are discussed as well. © 2003 Published by Elsevier Science B.V.
Original languageAmerican English
Pages848-851
Number of pages762
DOIs
StatePublished - 10 Jun 2003
EventSurface Science -
Duration: 10 Jun 2003 → …

Conference

ConferenceSurface Science
Period10/06/03 → …

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Torchynska, T. V., Casas Espinola, J. L., Velásquez Losada, E., Eliseev, P. G., Stintz, A., Malloy, K. J., & Pena Sierra, R. (2003). Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW. 848-851. Paper presented at Surface Science, . https://doi.org/10.1016/S0039-6028(03)00482-5