Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

T. V. Torchynska; J. L. Casas Espinola; E. Velásquez Losada; P. G. Eliseev; A. Stintz; K. J. Malloy; R. Pena Sierra

doi:10.1016/S0039-6028(03)00482-5

Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

T. V. Torchynska, J. L. Casas Espinola, E. Velásquez Losada, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

35 Scopus citations

Abstract

The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In_0.15Ga_0.85As multi-quantum-well (MQW) heterostructures have been investigated at variable temperatures. This paper presents the PL bands, connected with ground (GS) and multi-excited states (ES) in QDs. Not equidistant optical transitions have been revealed. Spectral peak shifts and PL intensity variations in the temperature range 12-220 K for all PL bands are analyzed. The activation energy of the temperature quenching processes for GS and 4 ES optical transitions in InAs QDs are measured. The mechanism of these processes and the positions of the energy levels in QDs are discussed as well.

Translated title of the contribution	Ionización térmica del suelo y estados excitados múltiples en puntos cuánticos de InAs integrados en InGaAs/GaAs MQW
Original language	English
Pages (from-to)	848-851
Number of pages	4
Journal	Surface Science
Volume	532-535
DOIs	https://doi.org/10.1016/S0039-6028(03)00482-5
State	Published - 10 Jun 2003
Event	Proceedings of the 7th International Conference on Nanometer - Malmo, Sweden Duration: 29 Aug 2002 → 31 Aug 2002

Keywords

Indium arsenide
Photoluminescence
Quantum effects

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10.1016/S0039-6028(03)00482-5

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title = "Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW",

abstract = "The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.85As multi-quantum-well (MQW) heterostructures have been investigated at variable temperatures. This paper presents the PL bands, connected with ground (GS) and multi-excited states (ES) in QDs. Not equidistant optical transitions have been revealed. Spectral peak shifts and PL intensity variations in the temperature range 12-220 K for all PL bands are analyzed. The activation energy of the temperature quenching processes for GS and 4 ES optical transitions in InAs QDs are measured. The mechanism of these processes and the positions of the energy levels in QDs are discussed as well.",

keywords = "Indium arsenide, Photoluminescence, Quantum effects",

author = "Torchynska, {T. V.} and {Casas Espinola}, {J. L.} and {Vel{\'a}squez Losada}, E. and Eliseev, {P. G.} and A. Stintz and Malloy, {K. J.} and {Pena Sierra}, R.",

year = "2003",

month = jun,

day = "10",

doi = "10.1016/S0039-6028(03)00482-5",

language = "Ingl{\'e}s",

volume = "532-535",

pages = "848--851",

journal = "Surface Science",

issn = "0039-6028",

note = "Proceedings of the 7th International Conference on Nanometer ; Conference date: 29-08-2002 Through 31-08-2002",

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TY - JOUR

T1 - Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

AU - Torchynska, T. V.

AU - Casas Espinola, J. L.

AU - Velásquez Losada, E.

AU - Eliseev, P. G.

AU - Stintz, A.

AU - Malloy, K. J.

AU - Pena Sierra, R.

PY - 2003/6/10

Y1 - 2003/6/10

N2 - The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.85As multi-quantum-well (MQW) heterostructures have been investigated at variable temperatures. This paper presents the PL bands, connected with ground (GS) and multi-excited states (ES) in QDs. Not equidistant optical transitions have been revealed. Spectral peak shifts and PL intensity variations in the temperature range 12-220 K for all PL bands are analyzed. The activation energy of the temperature quenching processes for GS and 4 ES optical transitions in InAs QDs are measured. The mechanism of these processes and the positions of the energy levels in QDs are discussed as well.

AB - The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.85As multi-quantum-well (MQW) heterostructures have been investigated at variable temperatures. This paper presents the PL bands, connected with ground (GS) and multi-excited states (ES) in QDs. Not equidistant optical transitions have been revealed. Spectral peak shifts and PL intensity variations in the temperature range 12-220 K for all PL bands are analyzed. The activation energy of the temperature quenching processes for GS and 4 ES optical transitions in InAs QDs are measured. The mechanism of these processes and the positions of the energy levels in QDs are discussed as well.

KW - Indium arsenide

KW - Photoluminescence

KW - Quantum effects

UR - http://www.scopus.com/inward/record.url?scp=0037846076&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(03)00482-5

DO - 10.1016/S0039-6028(03)00482-5

M3 - Artículo de la conferencia

AN - SCOPUS:0037846076

SN - 0039-6028

VL - 532-535

SP - 848

EP - 851

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 7th International Conference on Nanometer

Y2 - 29 August 2002 through 31 August 2002

ER -

Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

Abstract

Keywords

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