Resumen
The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.85As multi-quantum-well (MQW) heterostructures have been investigated at variable temperatures. This paper presents the PL bands, connected with ground (GS) and multi-excited states (ES) in QDs. Not equidistant optical transitions have been revealed. Spectral peak shifts and PL intensity variations in the temperature range 12-220 K for all PL bands are analyzed. The activation energy of the temperature quenching processes for GS and 4 ES optical transitions in InAs QDs are measured. The mechanism of these processes and the positions of the energy levels in QDs are discussed as well.
Título traducido de la contribución | Ionización térmica del suelo y estados excitados múltiples en puntos cuánticos de InAs integrados en InGaAs/GaAs MQW |
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Idioma original | Inglés |
Páginas (desde-hasta) | 848-851 |
Número de páginas | 4 |
Publicación | Surface Science |
Volumen | 532-535 |
DOI | |
Estado | Publicada - 10 jun. 2003 |
Evento | Proceedings of the 7th International Conference on Nanometer - Malmo, Suecia Duración: 29 ago. 2002 → 31 ago. 2002 |