Study of the effect of the synthesis temperature on the photoluminescent properties of InP@ZnS nanocrystals

F. Angel-Huerta, M. P. González-Araoz, J. S. Arias-Cerón, J. F. Sánchez-Ramírez, J. Díaz-Reyes, J. L. Herrera-Pérez, J. G. Mendoza-Álvarez

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Abstract

© 2018, Springer Science+Business Media, LLC, part of Springer Nature. In this work reports the synthesis and the characterization of InP@ZnS nanocrystals prepared by the colloid chemistry method at different synthesis temperatures. Varying the reaction temperature from 100 to 320 °C was possible to control the formation of the ZnS-shell on InP nanocrystals. The results of the nanocrystals chemical composition obtained by energy-dispersive X-ray spectroscopy demonstrated that with the increase of the reaction temperature the particles are obtained with a better stoichiometric ratio. By X-ray diffraction analysis and Raman scattering reveal that semiconductor nanocrystals showed the zinc blende crystalline phase in the direction (111), which was confirmed by high resolution transmission electron microscopy. The average nanocrystals sizes (2–10 nm) were estimated by the Wang equation, which are confirmed analysing the grain average diameter by transmission electron microscopy measurements. The nanocrystal sizes indicate a high quantum confinement because of they are lower than the InP exciton Bohr radius. The obtained semiconductor nanocrystals presented crystalline structure InP-core@ZnS-shell, uniformity in size and exhibit a dependence of emission in the range from 450–650 nm measured by UV–Vis spectroscopy, which allowed obtaining the bandgap of the nanostructures. The bandgap energy could be tuned from 3.73 to 2.38 eV through the variation of the synthesis temperature. The emission peak in InP-core varied as a function of quantum dots size, ranged in the 2.61–2.17 eV region. The InP@ZnS nanocrystals present a high passivation for samples synthetized at 300 °C.
Original languageAmerican English
Pages (from-to)15649-15657
Number of pages14083
JournalJournal of Materials Science: Materials in Electronics
DOIs
StatePublished - 1 Sep 2018

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Nanocrystals
nanocrystals
synthesis
Temperature
temperature
Energy gap
Colloid chemistry
Semiconductor materials
Crystalline materials
transmission electron microscopy
Quantum confinement
High resolution transmission electron microscopy
Passivation
Excitons
X ray diffraction analysis
spectroscopy
Semiconductor quantum dots
passivity
colloids
Raman scattering

Cite this

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title = "Study of the effect of the synthesis temperature on the photoluminescent properties of InP@ZnS nanocrystals",
abstract = "{\circledC} 2018, Springer Science+Business Media, LLC, part of Springer Nature. In this work reports the synthesis and the characterization of InP@ZnS nanocrystals prepared by the colloid chemistry method at different synthesis temperatures. Varying the reaction temperature from 100 to 320 °C was possible to control the formation of the ZnS-shell on InP nanocrystals. The results of the nanocrystals chemical composition obtained by energy-dispersive X-ray spectroscopy demonstrated that with the increase of the reaction temperature the particles are obtained with a better stoichiometric ratio. By X-ray diffraction analysis and Raman scattering reveal that semiconductor nanocrystals showed the zinc blende crystalline phase in the direction (111), which was confirmed by high resolution transmission electron microscopy. The average nanocrystals sizes (2–10 nm) were estimated by the Wang equation, which are confirmed analysing the grain average diameter by transmission electron microscopy measurements. The nanocrystal sizes indicate a high quantum confinement because of they are lower than the InP exciton Bohr radius. The obtained semiconductor nanocrystals presented crystalline structure InP-core@ZnS-shell, uniformity in size and exhibit a dependence of emission in the range from 450–650 nm measured by UV–Vis spectroscopy, which allowed obtaining the bandgap of the nanostructures. The bandgap energy could be tuned from 3.73 to 2.38 eV through the variation of the synthesis temperature. The emission peak in InP-core varied as a function of quantum dots size, ranged in the 2.61–2.17 eV region. The InP@ZnS nanocrystals present a high passivation for samples synthetized at 300 °C.",
author = "F. Angel-Huerta and Gonz{\'a}lez-Araoz, {M. P.} and Arias-Cer{\'o}n, {J. S.} and S{\'a}nchez-Ram{\'i}rez, {J. F.} and J. D{\'i}az-Reyes and Herrera-P{\'e}rez, {J. L.} and Mendoza-{\'A}lvarez, {J. G.}",
year = "2018",
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doi = "10.1007/s10854-018-9160-7",
language = "American English",
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Study of the effect of the synthesis temperature on the photoluminescent properties of InP@ZnS nanocrystals. / Angel-Huerta, F.; González-Araoz, M. P.; Arias-Cerón, J. S.; Sánchez-Ramírez, J. F.; Díaz-Reyes, J.; Herrera-Pérez, J. L.; Mendoza-Álvarez, J. G.

In: Journal of Materials Science: Materials in Electronics, 01.09.2018, p. 15649-15657.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of the effect of the synthesis temperature on the photoluminescent properties of InP@ZnS nanocrystals

AU - Angel-Huerta, F.

AU - González-Araoz, M. P.

AU - Arias-Cerón, J. S.

AU - Sánchez-Ramírez, J. F.

AU - Díaz-Reyes, J.

AU - Herrera-Pérez, J. L.

AU - Mendoza-Álvarez, J. G.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - © 2018, Springer Science+Business Media, LLC, part of Springer Nature. In this work reports the synthesis and the characterization of InP@ZnS nanocrystals prepared by the colloid chemistry method at different synthesis temperatures. Varying the reaction temperature from 100 to 320 °C was possible to control the formation of the ZnS-shell on InP nanocrystals. The results of the nanocrystals chemical composition obtained by energy-dispersive X-ray spectroscopy demonstrated that with the increase of the reaction temperature the particles are obtained with a better stoichiometric ratio. By X-ray diffraction analysis and Raman scattering reveal that semiconductor nanocrystals showed the zinc blende crystalline phase in the direction (111), which was confirmed by high resolution transmission electron microscopy. The average nanocrystals sizes (2–10 nm) were estimated by the Wang equation, which are confirmed analysing the grain average diameter by transmission electron microscopy measurements. The nanocrystal sizes indicate a high quantum confinement because of they are lower than the InP exciton Bohr radius. The obtained semiconductor nanocrystals presented crystalline structure InP-core@ZnS-shell, uniformity in size and exhibit a dependence of emission in the range from 450–650 nm measured by UV–Vis spectroscopy, which allowed obtaining the bandgap of the nanostructures. The bandgap energy could be tuned from 3.73 to 2.38 eV through the variation of the synthesis temperature. The emission peak in InP-core varied as a function of quantum dots size, ranged in the 2.61–2.17 eV region. The InP@ZnS nanocrystals present a high passivation for samples synthetized at 300 °C.

AB - © 2018, Springer Science+Business Media, LLC, part of Springer Nature. In this work reports the synthesis and the characterization of InP@ZnS nanocrystals prepared by the colloid chemistry method at different synthesis temperatures. Varying the reaction temperature from 100 to 320 °C was possible to control the formation of the ZnS-shell on InP nanocrystals. The results of the nanocrystals chemical composition obtained by energy-dispersive X-ray spectroscopy demonstrated that with the increase of the reaction temperature the particles are obtained with a better stoichiometric ratio. By X-ray diffraction analysis and Raman scattering reveal that semiconductor nanocrystals showed the zinc blende crystalline phase in the direction (111), which was confirmed by high resolution transmission electron microscopy. The average nanocrystals sizes (2–10 nm) were estimated by the Wang equation, which are confirmed analysing the grain average diameter by transmission electron microscopy measurements. The nanocrystal sizes indicate a high quantum confinement because of they are lower than the InP exciton Bohr radius. The obtained semiconductor nanocrystals presented crystalline structure InP-core@ZnS-shell, uniformity in size and exhibit a dependence of emission in the range from 450–650 nm measured by UV–Vis spectroscopy, which allowed obtaining the bandgap of the nanostructures. The bandgap energy could be tuned from 3.73 to 2.38 eV through the variation of the synthesis temperature. The emission peak in InP-core varied as a function of quantum dots size, ranged in the 2.61–2.17 eV region. The InP@ZnS nanocrystals present a high passivation for samples synthetized at 300 °C.

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