Study of the effect of the synthesis temperature on the photoluminescent properties of InP@ZnS nanocrystals

F. Angel-Huerta, M. P. González-Araoz, J. S. Arias-Cerón, J. F. Sánchez-Ramírez, J. Díaz-Reyes, J. L. Herrera-Pérez, J. G. Mendoza-Álvarez

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7 Citas (Scopus)

Resumen

In this work reports the synthesis and the characterization of InP@ZnS nanocrystals prepared by the colloid chemistry method at different synthesis temperatures. Varying the reaction temperature from 100 to 320 °C was possible to control the formation of the ZnS-shell on InP nanocrystals. The results of the nanocrystals chemical composition obtained by energy-dispersive X-ray spectroscopy demonstrated that with the increase of the reaction temperature the particles are obtained with a better stoichiometric ratio. By X-ray diffraction analysis and Raman scattering reveal that semiconductor nanocrystals showed the zinc blende crystalline phase in the direction (111), which was confirmed by high resolution transmission electron microscopy. The average nanocrystals sizes (2–10 nm) were estimated by the Wang equation, which are confirmed analysing the grain average diameter by transmission electron microscopy measurements. The nanocrystal sizes indicate a high quantum confinement because of they are lower than the InP exciton Bohr radius. The obtained semiconductor nanocrystals presented crystalline structure InP-core@ZnS-shell, uniformity in size and exhibit a dependence of emission in the range from 450–650 nm measured by UV–Vis spectroscopy, which allowed obtaining the bandgap of the nanostructures. The bandgap energy could be tuned from 3.73 to 2.38 eV through the variation of the synthesis temperature. The emission peak in InP-core varied as a function of quantum dots size, ranged in the 2.61–2.17 eV region. The InP@ZnS nanocrystals present a high passivation for samples synthetized at 300 °C.

Idioma originalInglés
Páginas (desde-hasta)15649-15657
Número de páginas9
PublicaciónJournal of Materials Science: Materials in Electronics
Volumen29
N.º18
DOI
EstadoPublicada - 1 sep. 2018

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