Structure, morphology, and local photoelectrical characterization of PbS films grown by SILAR

R. M. Woo-García; Agustin L. Herrera-May; L. García-González; L. Martínez-Cervantes; F. Caballero-Briones; F. López-Huerta; C. Guarneros-Aguilar

doi:10.1016/j.matlet.2022.131844

Structure, morphology, and local photoelectrical characterization of PbS films grown by SILAR

R. M. Woo-García, Agustin L. Herrera-May, L. García-González, L. Martínez-Cervantes, F. Caballero-Briones, F. López-Huerta, C. Guarneros-Aguilar

Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada (CICATA), Unidad Altamira

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this work, the structure, morphology, and local electrical properties of lead sulfide films growth by Successive Ionic Layer Adsorption and Reaction was studied. Films were deposited from 100 to 500 cycles onto glass substrates. Film thickness increase from 100 to 800 nm with the number of deposition cycles. The deposited films are single phase, cubic PbS. Raman spectra present a band at 969 cm⁻¹ arising from surface oxidation during deposition, as well as a band at 138 cm⁻¹ related with the growth mode. Films prepared at 100 cycles have a mixed layer-island growth mode, while the films prepared at 200 and 500 cycles have granular morphologies with voids. The local electrical characterization indicates that films electrical and photo response depend on the film morphology.

Original language	English
Article number	131844
Journal	Materials Letters
Volume	314
DOIs	https://doi.org/10.1016/j.matlet.2022.131844
State	Published - 1 May 2022

Keywords

Lead sulfide
SILAR
films

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10.1016/j.matlet.2022.131844

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title = "Structure, morphology, and local photoelectrical characterization of PbS films grown by SILAR",

abstract = "In this work, the structure, morphology, and local electrical properties of lead sulfide films growth by Successive Ionic Layer Adsorption and Reaction was studied. Films were deposited from 100 to 500 cycles onto glass substrates. Film thickness increase from 100 to 800 nm with the number of deposition cycles. The deposited films are single phase, cubic PbS. Raman spectra present a band at 969 cm−1 arising from surface oxidation during deposition, as well as a band at 138 cm−1 related with the growth mode. Films prepared at 100 cycles have a mixed layer-island growth mode, while the films prepared at 200 and 500 cycles have granular morphologies with voids. The local electrical characterization indicates that films electrical and photo response depend on the film morphology.",

keywords = "Lead sulfide, SILAR, films",

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doi = "10.1016/j.matlet.2022.131844",

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T1 - Structure, morphology, and local photoelectrical characterization of PbS films grown by SILAR

AU - Woo-García, R. M.

AU - Herrera-May, Agustin L.

AU - García-González, L.

AU - Martínez-Cervantes, L.

AU - Caballero-Briones, F.

AU - López-Huerta, F.

AU - Guarneros-Aguilar, C.

PY - 2022/5/1

Y1 - 2022/5/1

N2 - In this work, the structure, morphology, and local electrical properties of lead sulfide films growth by Successive Ionic Layer Adsorption and Reaction was studied. Films were deposited from 100 to 500 cycles onto glass substrates. Film thickness increase from 100 to 800 nm with the number of deposition cycles. The deposited films are single phase, cubic PbS. Raman spectra present a band at 969 cm−1 arising from surface oxidation during deposition, as well as a band at 138 cm−1 related with the growth mode. Films prepared at 100 cycles have a mixed layer-island growth mode, while the films prepared at 200 and 500 cycles have granular morphologies with voids. The local electrical characterization indicates that films electrical and photo response depend on the film morphology.

AB - In this work, the structure, morphology, and local electrical properties of lead sulfide films growth by Successive Ionic Layer Adsorption and Reaction was studied. Films were deposited from 100 to 500 cycles onto glass substrates. Film thickness increase from 100 to 800 nm with the number of deposition cycles. The deposited films are single phase, cubic PbS. Raman spectra present a band at 969 cm−1 arising from surface oxidation during deposition, as well as a band at 138 cm−1 related with the growth mode. Films prepared at 100 cycles have a mixed layer-island growth mode, while the films prepared at 200 and 500 cycles have granular morphologies with voids. The local electrical characterization indicates that films electrical and photo response depend on the film morphology.

KW - Lead sulfide

KW - SILAR

KW - films

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U2 - 10.1016/j.matlet.2022.131844

DO - 10.1016/j.matlet.2022.131844

M3 - Artículo

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SN - 0167-577X

VL - 314

JO - Materials Letters

JF - Materials Letters

M1 - 131844

ER -

Structure, morphology, and local photoelectrical characterization of PbS films grown by SILAR

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