Structural and optical properties of GaN thin films grown on Al                          2                         O                         3                          substrates by MOCVD at different reactor pressures

A. Guillén-Cervantes; Z. Rivera-Álvarez; M. López-López; A. Ponce-Pedraza; C. Guarneros; V. M. Sánchez-Reséndiz

doi:10.1016/j.apsusc.2011.09.089

Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures

A. Guillén-Cervantes, Z. Rivera-Álvarez, M. López-López, A. Ponce-Pedraza, C. Guarneros, V. M. Sánchez-Reséndiz

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

GaN thin films grown by MOCVD on (0 0 0 1) Al ₂ O ₃ substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

Original language	English
Pages (from-to)	1267-1271
Number of pages	5
Journal	Applied Surface Science
Volume	258
Issue number	3
DOIs	https://doi.org/10.1016/j.apsusc.2011.09.089
State	Published - 15 Nov 2011
Externally published	Yes

Keywords

Field-emission SEM
Hexagonal-shaped pits
MOCVD
Photoluminescence
Surface spirals

Access to Document

10.1016/j.apsusc.2011.09.089

Cite this

Guillén-Cervantes, A., Rivera-Álvarez, Z., López-López, M., Ponce-Pedraza, A., Guarneros, C., & Sánchez-Reséndiz, V. M. (2011). Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures Applied Surface Science, 258(3), 1267-1271. https://doi.org/10.1016/j.apsusc.2011.09.089

Guillén-Cervantes, A. ; Rivera-Álvarez, Z. ; López-López, M. et al. / Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures In: Applied Surface Science. 2011 ; Vol. 258, No. 3. pp. 1267-1271.

@article{c62ed52fa438439b8e69555d21b1b864,

title = " Structural and optical properties of GaN thin films grown on Al 2 O 3 substrates by MOCVD at different reactor pressures ",

abstract = " GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.",

keywords = "Field-emission SEM, Hexagonal-shaped pits, MOCVD, Photoluminescence, Surface spirals",

author = "A. Guill{\'e}n-Cervantes and Z. Rivera-{\'A}lvarez and M. L{\'o}pez-L{\'o}pez and A. Ponce-Pedraza and C. Guarneros and S{\'a}nchez-Res{\'e}ndiz, {V. M.}",

note = "Funding Information: The authors wish to acknowledge to Daniel Ram{\'i}rez for his technical assistance during the GaN samples growth and to A. Bertha Soto, Miguel Angel Avenda{\~n}o, R. Fragoso Soriano and A. Garc{\'i}a Sotelo for their technical support in the characterization experiments. This work was partially supported by CONACyT, M{\'e}xico .",

year = "2011",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2011.09.089",

language = "Ingl{\'e}s",

volume = "258",

pages = "1267--1271",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "3",

}

Guillén-Cervantes, A, Rivera-Álvarez, Z, López-López, M, Ponce-Pedraza, A, Guarneros, C & Sánchez-Reséndiz, VM 2011, ' Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures ', Applied Surface Science, vol. 258, no. 3, pp. 1267-1271. https://doi.org/10.1016/j.apsusc.2011.09.089

Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures . / Guillén-Cervantes, A.; Rivera-Álvarez, Z.; López-López, M. et al.
In: Applied Surface Science, Vol. 258, No. 3, 15.11.2011, p. 1267-1271.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural and optical properties of GaN thin films grown on Al 2 O 3 substrates by MOCVD at different reactor pressures

AU - Guillén-Cervantes, A.

AU - Rivera-Álvarez, Z.

AU - López-López, M.

AU - Ponce-Pedraza, A.

AU - Guarneros, C.

AU - Sánchez-Reséndiz, V. M.

N1 - Funding Information: The authors wish to acknowledge to Daniel Ramírez for his technical assistance during the GaN samples growth and to A. Bertha Soto, Miguel Angel Avendaño, R. Fragoso Soriano and A. García Sotelo for their technical support in the characterization experiments. This work was partially supported by CONACyT, México .

PY - 2011/11/15

Y1 - 2011/11/15

N2 - GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

AB - GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

KW - Field-emission SEM

KW - Hexagonal-shaped pits

KW - MOCVD

KW - Photoluminescence

KW - Surface spirals

UR - http://www.scopus.com/inward/record.url?scp=80455122738&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2011.09.089

DO - 10.1016/j.apsusc.2011.09.089

M3 - Artículo

SN - 0169-4332

VL - 258

SP - 1267

EP - 1271

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3

ER -

Guillén-Cervantes A, Rivera-Álvarez Z, López-López M, Ponce-Pedraza A, Guarneros C, Sánchez-Reséndiz VM. Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures Applied Surface Science. 2011 Nov 15;258(3):1267-1271. doi: 10.1016/j.apsusc.2011.09.089

Structural and optical properties of GaN thin films grown on Al ₂ O ₃ substrates by MOCVD at different reactor pressures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this