@inproceedings{c04cda78cae043d59199c80643219609,
title = "SiGe HBT featuringfr- > 600GHz at cryogenic temperature",
abstract = "A comparison of electrical performances of state-of-the-art SiGe heterojunction bipolar transistors at low temperature is presented. The performances increase results from the diminution of transit times thanks to the rise of non-stationary transport, the relative increase of the transconductance with the reduction of self-heating effects, and the decrease of access resistances.",
author = "N. Zerounian and Garcia, {E. Ramirez} and F. Aniel and P. Chevalier and B. Geynet and A. Chantre",
year = "2008",
doi = "10.1149/1.2986869",
language = "Ingl{\'e}s",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "1069--1077",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
edition = "10",
note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}