Semiconductor diode characterization for total skin electron irradiation

O. A. Madrid González; T. Rivera Montalvo

doi:10.1016/j.apradiso.2013.06.005

Semiconductor diode characterization for total skin electron irradiation

O. A. Madrid González, T. Rivera Montalvo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Applied Radiation and Isotopes
Volume	83
DOIs	https://doi.org/10.1016/j.apradiso.2013.06.005
State	Published - Jan 2014
Externally published	Yes

Keywords

Diode
Electrons
High rate
Irradiation
Mycosis
Total body

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10.1016/j.apradiso.2013.06.005

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title = "Semiconductor diode characterization for total skin electron irradiation",

abstract = "In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. {"}In vivo{"} dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.",

keywords = "Diode, Electrons, High rate, Irradiation, Mycosis, Total body",

author = "{Madrid Gonz{\'a}lez}, {O. A.} and {Rivera Montalvo}, T.",

year = "2014",

month = jan,

doi = "10.1016/j.apradiso.2013.06.005",

language = "Ingl{\'e}s",

volume = "83",

pages = "214--217",

journal = "Applied Radiation and Isotopes",

issn = "0969-8043",

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T1 - Semiconductor diode characterization for total skin electron irradiation

AU - Madrid González, O. A.

AU - Rivera Montalvo, T.

PY - 2014/1

Y1 - 2014/1

N2 - In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

AB - In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

KW - Diode

KW - Electrons

KW - High rate

KW - Irradiation

KW - Mycosis

KW - Total body

UR - http://www.scopus.com/inward/record.url?scp=84889085215&partnerID=8YFLogxK

U2 - 10.1016/j.apradiso.2013.06.005

DO - 10.1016/j.apradiso.2013.06.005

M3 - Artículo

C2 - 24018291

SN - 0969-8043

VL - 83

SP - 214

EP - 217

JO - Applied Radiation and Isotopes

JF - Applied Radiation and Isotopes

ER -

Semiconductor diode characterization for total skin electron irradiation

Abstract

Keywords

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