Resumen
In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.
Idioma original | Inglés |
---|---|
Páginas (desde-hasta) | 214-217 |
Número de páginas | 4 |
Publicación | Applied Radiation and Isotopes |
Volumen | 83 |
DOI | |
Estado | Publicada - ene. 2014 |
Publicado de forma externa | Sí |