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Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
G. Contreras
, M. Cardona, A. Axmann
Research output
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Contribution to journal
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Article
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peer-review
3
Scopus citations
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Dive into the research topics of 'Raman scattering studies in phosphorus implanted and laser annealed boron doped Si'. Together they form a unique fingerprint.
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Engineering & Materials Science
Raman scattering
80%
Phosphorus
67%
Boron
63%
Hole concentration
52%
Phonons
43%
Compensation and Redress
42%
Charge carriers
42%
Lasers
42%
Light scattering
39%
Laser pulses
36%
Annealing
27%
Chemistry
Laser Annealing
100%
Hole Concentration
84%
Phonon
62%
Charge Carrier
53%
Light Scattering
51%
Boron Atom
48%
Phosphorus(.)
46%
Physics & Astronomy
phosphorus
54%
softening
53%
boron
47%
Raman spectra
42%
lasers
24%
laser annealing
22%
implantation
16%
charge carriers
16%
light scattering
15%
continuums
13%
phonons
12%
vibration
12%
matrices
10%
pulses
9%
excitation
9%
interactions
7%