Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

G. Contreras; M. Cardona; A. Axmann

doi:10.1016/0038-1098(85)90068-7

Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

G. Contreras, M. Cardona, A. Axmann

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3 Scopus citations

Abstract

Implantation of P in B bulk doped Si (hole concentration = 2.1×10²⁰ cm^-3) followed by multiple pulse laser annealing with a XeCl laser has produced the incorporation of P in substitutional sites of the matrix and also charge carrier compensation. We report in this paper light scattering studies of these samples, in which a decrease of the hole-induced softening of the Si-Raman line is observed. This softening depends on the type and concentration of free carriers and thus, in our case, on the degree of compensation. This softening is discussed in terms of the interaction of the continuum of free carrier excitations with the Raman phonon. We also report the observation of the vibrations of ¹¹B-³¹ P pairs.

Original language	English
Pages (from-to)	861-865
Number of pages	5
Journal	Solid State Communications
Volume	53
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(85)90068-7
State	Published - Mar 1985
Externally published	Yes

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@article{aa2063e2881847fab0926c590039a81a,

title = "Raman scattering studies in phosphorus implanted and laser annealed boron doped Si",

abstract = "Implantation of P in B bulk doped Si (hole concentration = 2.1×1020 cm-3) followed by multiple pulse laser annealing with a XeCl laser has produced the incorporation of P in substitutional sites of the matrix and also charge carrier compensation. We report in this paper light scattering studies of these samples, in which a decrease of the hole-induced softening of the Si-Raman line is observed. This softening depends on the type and concentration of free carriers and thus, in our case, on the degree of compensation. This softening is discussed in terms of the interaction of the continuum of free carrier excitations with the Raman phonon. We also report the observation of the vibrations of 11B-31 P pairs.",

author = "G. Contreras and M. Cardona and A. Axmann",

year = "1985",

month = mar,

doi = "10.1016/0038-1098(85)90068-7",

language = "Ingl{\'e}s",

volume = "53",

pages = "861--865",

journal = "Solid State Communications",

issn = "0038-1098",

number = "10",

}

TY - JOUR

T1 - Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

AU - Contreras, G.

AU - Cardona, M.

AU - Axmann, A.

PY - 1985/3

Y1 - 1985/3

N2 - Implantation of P in B bulk doped Si (hole concentration = 2.1×1020 cm-3) followed by multiple pulse laser annealing with a XeCl laser has produced the incorporation of P in substitutional sites of the matrix and also charge carrier compensation. We report in this paper light scattering studies of these samples, in which a decrease of the hole-induced softening of the Si-Raman line is observed. This softening depends on the type and concentration of free carriers and thus, in our case, on the degree of compensation. This softening is discussed in terms of the interaction of the continuum of free carrier excitations with the Raman phonon. We also report the observation of the vibrations of 11B-31 P pairs.

AB - Implantation of P in B bulk doped Si (hole concentration = 2.1×1020 cm-3) followed by multiple pulse laser annealing with a XeCl laser has produced the incorporation of P in substitutional sites of the matrix and also charge carrier compensation. We report in this paper light scattering studies of these samples, in which a decrease of the hole-induced softening of the Si-Raman line is observed. This softening depends on the type and concentration of free carriers and thus, in our case, on the degree of compensation. This softening is discussed in terms of the interaction of the continuum of free carrier excitations with the Raman phonon. We also report the observation of the vibrations of 11B-31 P pairs.

UR - http://www.scopus.com/inward/record.url?scp=0022028888&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(85)90068-7

DO - 10.1016/0038-1098(85)90068-7

M3 - Artículo

SN - 0038-1098

VL - 53

SP - 861

EP - 865

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

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