TY - JOUR
T1 - Raman scattering by phonons in heavily doped semiconductors
AU - González de la Cruz, G.
AU - Contreras-Puente, G.
AU - Castillo-Alvarado, F. L.
AU - Mejía-García, C.
AU - Compaan, A.
N1 - Funding Information:
* Work partially supported by CONACyT + On leave from CINVESTAV-IPN + + On sabbatical leave at UAM-AZCAPOTZALCO + + + Permanent address University of Toledo, Toledo OH 43606.-3390
PY - 1992/6
Y1 - 1992/6
N2 - We present in this work experimental results of the Full Width at Half Maximum (FWHM) and frequency shift of the Raman phonon in heavily doped Ge:P, as a function of the temperature. Phonon confinement is found due to the disorder induced by the impurities in the crystal.
AB - We present in this work experimental results of the Full Width at Half Maximum (FWHM) and frequency shift of the Raman phonon in heavily doped Ge:P, as a function of the temperature. Phonon confinement is found due to the disorder induced by the impurities in the crystal.
UR - http://www.scopus.com/inward/record.url?scp=0026873942&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(92)90722-L
DO - 10.1016/0038-1098(92)90722-L
M3 - Artículo
SN - 0038-1098
VL - 82
SP - 927
EP - 929
JO - Solid State Communications
JF - Solid State Communications
IS - 12
ER -