Process parameters affecting plasma enhanced crystallization of a-Si : H using a PECVD equipment

R Garcia; M Estrada; A Cerdeira; L Resendiz; IEEE

Process parameters affecting plasma enhanced crystallization of a-Si : H using a PECVD equipment

R Garcia, M Estrada, A Cerdeira, L Resendiz, IEEE

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	2002 23rd International Conference on Microelectronics, Vols 1 and 2, Proceedings
State	Published - 2002

Cite this

@article{0d7437b9e6324e908d001ebb1120d19d,

title = "Process parameters affecting plasma enhanced crystallization of a-Si : H using a PECVD equipment",

author = "R Garcia and M Estrada and A Cerdeira and L Resendiz and IEEE",

year = "2002",

language = "Indefinido/desconocido",

journal = "2002 23rd International Conference on Microelectronics, Vols 1 and 2, Proceedings",

}

TY - JOUR

T1 - Process parameters affecting plasma enhanced crystallization of a-Si : H using a PECVD equipment

AU - Garcia, R

AU - Estrada, M

AU - Cerdeira, A

AU - Resendiz, L

AU - IEEE,

PY - 2002

Y1 - 2002

UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000176359700102&KeyUID=WOS:000176359700102

M3 - Artículo

JO - 2002 23rd International Conference on Microelectronics, Vols 1 and 2, Proceedings

JF - 2002 23rd International Conference on Microelectronics, Vols 1 and 2, Proceedings

ER -

Process parameters affecting plasma enhanced crystallization of a-Si : H using a PECVD equipment

Other files and links

Cite this