Physical properties of In2S3 thin films grown by chemical bath deposition at different temperatures

P. E. Rodríguez-Hernández; F. De Moure-Flores; A. Guilléncervantes; E. Campos-González; J. Santos-Cruz; S. A. Mayénhernández; J. S. Arias-Cerón; M. L. de la Olvera; O. Zelayaángel; G. Contreras-Puente

Physical properties of In₂S₃ thin films grown by chemical bath deposition at different temperatures

P. E. Rodríguez-Hernández, F. De Moure-Flores, A. Guilléncervantes, E. Campos-González, J. Santos-Cruz, S. A. Mayénhernández, J. S. Arias-Cerón, M. L. de la Olvera, O. Zelayaángel, G. Contreras-Puente

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Indium sulphide thin films were deposited on SnO₂:F/soda-lime glass substrates at different temperatures by chemical bath deposition. InCl₃ and C₂H₅NS were employed as indium and sulfur sources, respectively. The In₂S₃ films were deposited at temperatures of: 60 °C, 70 °C and 80 °C. The as-grown films were annealed at 300 °C in nitrogen atmosphere. The physical properties were analyzed as a function of the bath temperature, before and after the thermal treatment. The X-ray diffraction and Raman characterizations indicate that In₂S₃ films with tetragonal phase were obtained. Atomic force microscopy showed that after the annealing features of grain coalescence on surface are present. The UV-Vis analysis indicated that after thermal treatment In₂S₃ films have high transmission in the visible range and a bandgap above 2.50 eV.

Original language	English
Pages (from-to)	389-396
Number of pages	8
Journal	Chalcogenide Letters
Volume	13
Issue number	8
State	Published - 1 Aug 2016

Keywords

Chemical bath deposition
InS films
Optical properties
Room temperature photoluminescence
Solar cells applications

Cite this

@article{3ed5963355f24f7b924ae52ae1db92d1,

title = "Physical properties of In2S3 thin films grown by chemical bath deposition at different temperatures",

abstract = "Indium sulphide thin films were deposited on SnO2:F/soda-lime glass substrates at different temperatures by chemical bath deposition. InCl3 and C2H5NS were employed as indium and sulfur sources, respectively. The In2S3 films were deposited at temperatures of: 60 °C, 70 °C and 80 °C. The as-grown films were annealed at 300 °C in nitrogen atmosphere. The physical properties were analyzed as a function of the bath temperature, before and after the thermal treatment. The X-ray diffraction and Raman characterizations indicate that In2S3 films with tetragonal phase were obtained. Atomic force microscopy showed that after the annealing features of grain coalescence on surface are present. The UV-Vis analysis indicated that after thermal treatment In2S3 films have high transmission in the visible range and a bandgap above 2.50 eV.",

keywords = "Chemical bath deposition, InS films, Optical properties, Room temperature photoluminescence, Solar cells applications",

author = "Rodr{\'i}guez-Hern{\'a}ndez, {P. E.} and {De Moure-Flores}, F. and A. Guill{\'e}ncervantes and E. Campos-Gonz{\'a}lez and J. Santos-Cruz and May{\'e}nhern{\'a}ndez, {S. A.} and Arias-Cer{\'o}n, {J. S.} and {de la Olvera}, {M. L.} and O. Zelaya{\'a}ngel and G. Contreras-Puente",

year = "2016",

month = aug,

day = "1",

language = "Ingl{\'e}s",

volume = "13",

pages = "389--396",

journal = "Chalcogenide Letters",

issn = "1584-8663",

number = "8",

}

TY - JOUR

T1 - Physical properties of In2S3 thin films grown by chemical bath deposition at different temperatures

AU - Rodríguez-Hernández, P. E.

AU - De Moure-Flores, F.

AU - Guilléncervantes, A.

AU - Campos-González, E.

AU - Santos-Cruz, J.

AU - Mayénhernández, S. A.

AU - Arias-Cerón, J. S.

AU - de la Olvera, M. L.

AU - Zelayaángel, O.

AU - Contreras-Puente, G.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Indium sulphide thin films were deposited on SnO2:F/soda-lime glass substrates at different temperatures by chemical bath deposition. InCl3 and C2H5NS were employed as indium and sulfur sources, respectively. The In2S3 films were deposited at temperatures of: 60 °C, 70 °C and 80 °C. The as-grown films were annealed at 300 °C in nitrogen atmosphere. The physical properties were analyzed as a function of the bath temperature, before and after the thermal treatment. The X-ray diffraction and Raman characterizations indicate that In2S3 films with tetragonal phase were obtained. Atomic force microscopy showed that after the annealing features of grain coalescence on surface are present. The UV-Vis analysis indicated that after thermal treatment In2S3 films have high transmission in the visible range and a bandgap above 2.50 eV.

AB - Indium sulphide thin films were deposited on SnO2:F/soda-lime glass substrates at different temperatures by chemical bath deposition. InCl3 and C2H5NS were employed as indium and sulfur sources, respectively. The In2S3 films were deposited at temperatures of: 60 °C, 70 °C and 80 °C. The as-grown films were annealed at 300 °C in nitrogen atmosphere. The physical properties were analyzed as a function of the bath temperature, before and after the thermal treatment. The X-ray diffraction and Raman characterizations indicate that In2S3 films with tetragonal phase were obtained. Atomic force microscopy showed that after the annealing features of grain coalescence on surface are present. The UV-Vis analysis indicated that after thermal treatment In2S3 films have high transmission in the visible range and a bandgap above 2.50 eV.

KW - Chemical bath deposition

KW - InS films

KW - Optical properties

KW - Room temperature photoluminescence

KW - Solar cells applications

UR - http://www.scopus.com/inward/record.url?scp=84987723187&partnerID=8YFLogxK

M3 - Artículo

SN - 1584-8663

VL - 13

SP - 389

EP - 396

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 8

ER -

Physical properties of In₂S₃ thin films grown by chemical bath deposition at different temperatures

Abstract

Keywords

Other files and links

Fingerprint

Cite this