Optical memory based on GeSbTe-O alloys

E. Morales-Sánchez; C. Rivera-Rodríguez; E. Prokhorov; Yu Kovalenko; J. González Hernandez

doi:10.1109/ICEEE.2005.1529658

Optical memory based on GeSbTe-O alloys

E. Morales-Sánchez, C. Rivera-Rodríguez, E. Prokhorov, Yu Kovalenko, J. González Hernandez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The purpose of this study was to develop new active material for phase-change optical memory (Compact Disks) which would make it possible to record information with 3 or 4 levels of reflectivity and not only 2, as is the case now. With this goal in mind, the optical properties (reflectance) of Ge₁Sb₂Te₄ films doped with oxygen were investigated. X-ray diffraction shows that the crystalline phase for films with 2-8% oxygen corresponds to a Ge₁Sb₂Te₄ composition. However, the crystalline phase for films with more than 10% oxygen corresponds to Sb₂Te₃. This phase segregation in films containing more than 10% oxygen gives, as a result, an increase in nucleation times and in laser-induced crystallization times, making multilevel recording possible, that is to say, optical memory with ternary or quaternary code instead of just binary code.

Original language	English
Title of host publication	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005
Pages	416-418
Number of pages	3
DOIs	https://doi.org/10.1109/ICEEE.2005.1529658
State	Published - 2005
Externally published	Yes
Event	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005 - Mexico City, Mexico Duration: 7 Sep 2005 → 9 Sep 2005

Publication series

Name	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005
Volume	2005

Conference

Conference	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005
Country/Territory	Mexico
City	Mexico City
Period	7/09/05 → 9/09/05

Keywords

Crystallization process
Optical memory
Reflectance

Access to Document

10.1109/ICEEE.2005.1529658

Cite this

Morales-Sánchez, E., Rivera-Rodríguez, C., Prokhorov, E., Kovalenko, Y., & Hernandez, J. G. (2005). Optical memory based on GeSbTe-O alloys. In 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005 (pp. 416-418). Article 1529658 (2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005; Vol. 2005). https://doi.org/10.1109/ICEEE.2005.1529658

Morales-Sánchez, E. ; Rivera-Rodríguez, C. ; Prokhorov, E. et al. / Optical memory based on GeSbTe-O alloys. 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 2005. pp. 416-418 (2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005).

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title = "Optical memory based on GeSbTe-O alloys",

abstract = "The purpose of this study was to develop new active material for phase-change optical memory (Compact Disks) which would make it possible to record information with 3 or 4 levels of reflectivity and not only 2, as is the case now. With this goal in mind, the optical properties (reflectance) of Ge1Sb2Te4 films doped with oxygen were investigated. X-ray diffraction shows that the crystalline phase for films with 2-8% oxygen corresponds to a Ge1Sb2Te4 composition. However, the crystalline phase for films with more than 10% oxygen corresponds to Sb2Te3. This phase segregation in films containing more than 10% oxygen gives, as a result, an increase in nucleation times and in laser-induced crystallization times, making multilevel recording possible, that is to say, optical memory with ternary or quaternary code instead of just binary code.",

keywords = "Crystallization process, Optical memory, Reflectance",

author = "E. Morales-S{\'a}nchez and C. Rivera-Rodr{\'i}guez and E. Prokhorov and Yu Kovalenko and Hernandez, {J. Gonz{\'a}lez}",

year = "2005",

doi = "10.1109/ICEEE.2005.1529658",

language = "Ingl{\'e}s",

isbn = "0780392302",

series = "2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005",

pages = "416--418",

booktitle = "2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005",

note = "2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005 ; Conference date: 07-09-2005 Through 09-09-2005",

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Morales-Sánchez, E, Rivera-Rodríguez, C, Prokhorov, E, Kovalenko, Y & Hernandez, JG 2005, Optical memory based on GeSbTe-O alloys. in 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005., 1529658, 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005, vol. 2005, pp. 416-418, 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005, Mexico City, Mexico, 7/09/05. https://doi.org/10.1109/ICEEE.2005.1529658

Optical memory based on GeSbTe-O alloys. / Morales-Sánchez, E.; Rivera-Rodríguez, C.; Prokhorov, E. et al.
2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 2005. p. 416-418 1529658 (2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The purpose of this study was to develop new active material for phase-change optical memory (Compact Disks) which would make it possible to record information with 3 or 4 levels of reflectivity and not only 2, as is the case now. With this goal in mind, the optical properties (reflectance) of Ge1Sb2Te4 films doped with oxygen were investigated. X-ray diffraction shows that the crystalline phase for films with 2-8% oxygen corresponds to a Ge1Sb2Te4 composition. However, the crystalline phase for films with more than 10% oxygen corresponds to Sb2Te3. This phase segregation in films containing more than 10% oxygen gives, as a result, an increase in nucleation times and in laser-induced crystallization times, making multilevel recording possible, that is to say, optical memory with ternary or quaternary code instead of just binary code.

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Morales-Sánchez E, Rivera-Rodríguez C, Prokhorov E, Kovalenko Y, Hernandez JG. Optical memory based on GeSbTe-O alloys. In 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 2005. p. 416-418. 1529658. (2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005). doi: 10.1109/ICEEE.2005.1529658

Optical memory based on GeSbTe-O alloys

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Keywords

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