Optical and structural properties of WO3 as a function of the annealing temperature

J. Diaz-Reyes, J. E. Flores-Mena, J. M. Gutierrez-Arias, M. M. Morin-Castillo, H. Azucena-Coyotecatl, M. Galván, P. Rodríguez-Fragoso, A. Mendez-López

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

This work presents a study of effect of annealing temperature on optical and structural properties of WO3 that has been deposited by hot-filament metal oxide deposition (HFMOD). X-ray diffraction shows that the as-deposited WO3 films present mainly monoclinic crystalline phase. The Raman spectrum shows four intense peaks that are typical Raman peaks of crystalline WO3 (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that enhance and increase their intensity with the annealing temperature. gap can be varied from 2.92 to 3.15 eV by annealing WO3 from O to 500°C. The photoluminescence response of the asdeposited film presents two radiative transitions centered at 2.04 and 2.65 eV that are associated to oxygen vacancies.

Original languageEnglish
Title of host publicationAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
Pages99-104
Number of pages6
StatePublished - 2010
Event3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10 - Faro, Portugal
Duration: 3 Nov 20105 Nov 2010

Publication series

NameAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10

Conference

Conference3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
Country/TerritoryPortugal
CityFaro
Period3/11/105/11/10

Keywords

  • Compound semiconductors
  • HFMOD
  • Novel materials and technological advances for electrochromics
  • Raman spectroscopy
  • Semiconductors growth
  • Transmittance spectroscopy
  • WO semiconductors
  • X-ray
  • XPS

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