Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization

M. Rojas-López; A. Orduña-Díaz; R. Delgado-Macuil; V. L. Gayou; R. E. Pérez-Blanco; A. Torres-Jacome; J. Olvera-Hernández

doi:10.1016/j.jnoncrysol.2005.11.021

Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization

M. Rojas-López, A. Orduña-Díaz, R. Delgado-Macuil, V. L. Gayou, R. E. Pérez-Blanco, A. Torres-Jacome, J. Olvera-Hernández

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We analyzed the amorphous-crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 °C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t² dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the μc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrami equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured V_g = 7.2 × 10^-3 μm/min is a direct consequence of the low annealing temperature applied (250 °C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si-H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the μc-Si:H films.

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	3
DOIs	https://doi.org/10.1016/j.jnoncrysol.2005.11.021
State	Published - 1 Mar 2006

Keywords

Crystal growth
FTIR measurements
Optical microscopy
Reflectivity
Silicon

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10.1016/j.jnoncrysol.2005.11.021

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title = "Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization",

abstract = "We analyzed the amorphous-crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 °C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t2 dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the μc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrami equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured Vg = 7.2 × 10-3 μm/min is a direct consequence of the low annealing temperature applied (250 °C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si-H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the μc-Si:H films.",

keywords = "Crystal growth, FTIR measurements, Optical microscopy, Reflectivity, Silicon",

author = "M. Rojas-L{\'o}pez and A. Ordu{\~n}a-D{\'i}az and R. Delgado-Macuil and Gayou, {V. L.} and P{\'e}rez-Blanco, {R. E.} and A. Torres-Jacome and J. Olvera-Hern{\'a}ndez",

year = "2006",

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doi = "10.1016/j.jnoncrysol.2005.11.021",

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T1 - Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization

AU - Rojas-López, M.

AU - Orduña-Díaz, A.

AU - Delgado-Macuil, R.

AU - Gayou, V. L.

AU - Pérez-Blanco, R. E.

AU - Torres-Jacome, A.

AU - Olvera-Hernández, J.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - We analyzed the amorphous-crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 °C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t2 dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the μc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrami equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured Vg = 7.2 × 10-3 μm/min is a direct consequence of the low annealing temperature applied (250 °C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si-H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the μc-Si:H films.

AB - We analyzed the amorphous-crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 °C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t2 dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the μc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrami equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured Vg = 7.2 × 10-3 μm/min is a direct consequence of the low annealing temperature applied (250 °C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si-H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the μc-Si:H films.

KW - Crystal growth

KW - FTIR measurements

KW - Optical microscopy

KW - Reflectivity

KW - Silicon

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DO - 10.1016/j.jnoncrysol.2005.11.021

M3 - Artículo

SN - 0022-3093

VL - 352

SP - 281

EP - 284

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 3

ER -

Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization

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Keywords

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