Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

Gerardo Gutierrez-Heredia, Israel Mejia, Norberto Hernandez-Como, Martha E. Rivas-Aguilar, Victor H. Martinez-Landeros, Francisco S. Aguirre-Tostado, Bruce E. Gnade, Manuel Quevedo

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%. © 2013 Materials Research Society.
Original languageAmerican English
Pages299-303
Number of pages268
DOIs
StatePublished - 10 Dec 2013
Externally publishedYes
EventMaterials Research Society Symposium Proceedings -
Duration: 1 Jan 2014 → …

Conference

ConferenceMaterials Research Society Symposium Proceedings
Period1/01/14 → …

Fingerprint

Zinc Oxide
Aluminum
Temperature
Lasers
Equipment and Supplies
Research

Cite this

Gutierrez-Heredia, G., Mejia, I., Hernandez-Como, N., Rivas-Aguilar, M. E., Martinez-Landeros, V. H., Aguirre-Tostado, F. S., ... Quevedo, M. (2013). Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. 299-303. Paper presented at Materials Research Society Symposium Proceedings, . https://doi.org/10.1557/opl.2013.102
Gutierrez-Heredia, Gerardo ; Mejia, Israel ; Hernandez-Como, Norberto ; Rivas-Aguilar, Martha E. ; Martinez-Landeros, Victor H. ; Aguirre-Tostado, Francisco S. ; Gnade, Bruce E. ; Quevedo, Manuel. / Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. Paper presented at Materials Research Society Symposium Proceedings, .268 p.
@conference{92da547d45ec477bb8297363d4169b81,
title = "Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications",
abstract = "Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80{\%}. {\circledC} 2013 Materials Research Society.",
author = "Gerardo Gutierrez-Heredia and Israel Mejia and Norberto Hernandez-Como and Rivas-Aguilar, {Martha E.} and Martinez-Landeros, {Victor H.} and Aguirre-Tostado, {Francisco S.} and Gnade, {Bruce E.} and Manuel Quevedo",
year = "2013",
month = "12",
day = "10",
doi = "10.1557/opl.2013.102",
language = "American English",
pages = "299--303",
note = "Materials Research Society Symposium Proceedings ; Conference date: 01-01-2014",

}

Gutierrez-Heredia, G, Mejia, I, Hernandez-Como, N, Rivas-Aguilar, ME, Martinez-Landeros, VH, Aguirre-Tostado, FS, Gnade, BE & Quevedo, M 2013, 'Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications', Paper presented at Materials Research Society Symposium Proceedings, 1/01/14 pp. 299-303. https://doi.org/10.1557/opl.2013.102

Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. / Gutierrez-Heredia, Gerardo; Mejia, Israel; Hernandez-Como, Norberto; Rivas-Aguilar, Martha E.; Martinez-Landeros, Victor H.; Aguirre-Tostado, Francisco S.; Gnade, Bruce E.; Quevedo, Manuel.

2013. 299-303 Paper presented at Materials Research Society Symposium Proceedings, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

AU - Gutierrez-Heredia, Gerardo

AU - Mejia, Israel

AU - Hernandez-Como, Norberto

AU - Rivas-Aguilar, Martha E.

AU - Martinez-Landeros, Victor H.

AU - Aguirre-Tostado, Francisco S.

AU - Gnade, Bruce E.

AU - Quevedo, Manuel

PY - 2013/12/10

Y1 - 2013/12/10

N2 - Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%. © 2013 Materials Research Society.

AB - Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%. © 2013 Materials Research Society.

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84889238256&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84889238256&origin=inward

U2 - 10.1557/opl.2013.102

DO - 10.1557/opl.2013.102

M3 - Paper

SP - 299

EP - 303

ER -

Gutierrez-Heredia G, Mejia I, Hernandez-Como N, Rivas-Aguilar ME, Martinez-Landeros VH, Aguirre-Tostado FS et al. Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. 2013. Paper presented at Materials Research Society Symposium Proceedings, . https://doi.org/10.1557/opl.2013.102