Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

Gerardo Gutierrez-Heredia; Israel Mejia; Norberto Hernandez-Como; Martha E. Rivas-Aguilar; Victor H. Martinez-Landeros; Francisco S. Aguirre-Tostado; Bruce E. Gnade; Manuel Quevedo

doi:10.1557/opl.2013.102

Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

Gerardo Gutierrez-Heredia, Israel Mejia, Norberto Hernandez-Como, Martha E. Rivas-Aguilar, Victor H. Martinez-Landeros, Francisco S. Aguirre-Tostado, Bruce E. Gnade, Manuel Quevedo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm²/V-s, threshold voltage in the range of 7 V and On/Off current ratios >10⁵. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.

Original language	English
Title of host publication	Oxide Semiconductors and Thin Films
Pages	299-303
Number of pages	5
DOIs	https://doi.org/10.1557/opl.2013.102
State	Published - 2013
Externally published	Yes
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: 25 Nov 2012 → 30 Nov 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1494
ISSN (Print)	0272-9172

Conference

Conference	2012 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	25/11/12 → 30/11/12

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10.1557/opl.2013.102

Cite this

Gutierrez-Heredia, G., Mejia, I., Hernandez-Como, N., Rivas-Aguilar, M. E., Martinez-Landeros, V. H., Aguirre-Tostado, F. S., Gnade, B. E., & Quevedo, M. (2013). Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. In Oxide Semiconductors and Thin Films (pp. 299-303). (Materials Research Society Symposium Proceedings; Vol. 1494). https://doi.org/10.1557/opl.2013.102

@inproceedings{92da547d45ec477bb8297363d4169b81,

title = "Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications",

abstract = "Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.",

author = "Gerardo Gutierrez-Heredia and Israel Mejia and Norberto Hernandez-Como and Rivas-Aguilar, {Martha E.} and Martinez-Landeros, {Victor H.} and Aguirre-Tostado, {Francisco S.} and Gnade, {Bruce E.} and Manuel Quevedo",

year = "2013",

doi = "10.1557/opl.2013.102",

language = "Ingl{\'e}s",

isbn = "9781605114712",

series = "Materials Research Society Symposium Proceedings",

pages = "299--303",

booktitle = "Oxide Semiconductors and Thin Films",

note = "2012 MRS Fall Meeting ; Conference date: 25-11-2012 Through 30-11-2012",

}

Gutierrez-Heredia, G, Mejia, I, Hernandez-Como, N, Rivas-Aguilar, ME, Martinez-Landeros, VH, Aguirre-Tostado, FS, Gnade, BE & Quevedo, M 2013, Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. in Oxide Semiconductors and Thin Films. Materials Research Society Symposium Proceedings, vol. 1494, pp. 299-303, 2012 MRS Fall Meeting, Boston, MA, United States, 25/11/12. https://doi.org/10.1557/opl.2013.102

Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications. / Gutierrez-Heredia, Gerardo; Mejia, Israel; Hernandez-Como, Norberto et al.
Oxide Semiconductors and Thin Films. 2013. p. 299-303 (Materials Research Society Symposium Proceedings; Vol. 1494).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

AU - Gutierrez-Heredia, Gerardo

AU - Mejia, Israel

AU - Hernandez-Como, Norberto

AU - Rivas-Aguilar, Martha E.

AU - Martinez-Landeros, Victor H.

AU - Aguirre-Tostado, Francisco S.

AU - Gnade, Bruce E.

AU - Quevedo, Manuel

PY - 2013

Y1 - 2013

N2 - Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.

AB - Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.

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U2 - 10.1557/opl.2013.102

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M3 - Contribución a la conferencia

AN - SCOPUS:84889238256

SN - 9781605114712

T3 - Materials Research Society Symposium Proceedings

SP - 299

EP - 303

BT - Oxide Semiconductors and Thin Films

T2 - 2012 MRS Fall Meeting

Y2 - 25 November 2012 through 30 November 2012

ER -

Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

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