Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications

Gerardo Gutierrez-Heredia, Israel Mejia, Norberto Hernandez-Como, Martha E. Rivas-Aguilar, Victor H. Martinez-Landeros, Francisco S. Aguirre-Tostado, Bruce E. Gnade, Manuel Quevedo

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4 Citas (Scopus)

Resumen

Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.

Idioma originalInglés
Título de la publicación alojadaOxide Semiconductors and Thin Films
Páginas299-303
Número de páginas5
DOI
EstadoPublicada - 2013
Publicado de forma externa
Evento2012 MRS Fall Meeting - Boston, MA, Estados Unidos
Duración: 25 nov. 201230 nov. 2012

Serie de la publicación

NombreMaterials Research Society Symposium Proceedings
Volumen1494
ISSN (versión impresa)0272-9172

Conferencia

Conferencia2012 MRS Fall Meeting
País/TerritorioEstados Unidos
CiudadBoston, MA
Período25/11/1230/11/12

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