TY - GEN
T1 - Low temperature ZnO TFTs fabrication with Al and AZO contacts for flexible transparent applications
AU - Gutierrez-Heredia, Gerardo
AU - Mejia, Israel
AU - Hernandez-Como, Norberto
AU - Rivas-Aguilar, Martha E.
AU - Martinez-Landeros, Victor H.
AU - Aguirre-Tostado, Francisco S.
AU - Gnade, Bruce E.
AU - Quevedo, Manuel
PY - 2013
Y1 - 2013
N2 - Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.
AB - Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100°C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using e-beam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80%.
UR - http://www.scopus.com/inward/record.url?scp=84889238256&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.102
DO - 10.1557/opl.2013.102
M3 - Contribución a la conferencia
AN - SCOPUS:84889238256
SN - 9781605114712
T3 - Materials Research Society Symposium Proceedings
SP - 299
EP - 303
BT - Oxide Semiconductors and Thin Films
T2 - 2012 MRS Fall Meeting
Y2 - 25 November 2012 through 30 November 2012
ER -