Light emitting mechanisms dependent on stoichiometry of Si-rich-SiN_x films grown by PECVD

Engineering & Materials Science

• Photoluminescence 100%
• Plasma enhanced chemical vapor deposition 87%
• Stoichiometry 82%
• Light emission 23%
• Silicon 18%
• Silicon nitride 9%
• Annealing 7%
• Flow of gases 7%
• Wavelength 6%
• Defects 5%
• Temperature 3%

Chemistry

• Reaction Stoichiometry 50%
• Photoluminescence 39%
• Photoluminescence Spectrum 30%
• Liquid Film 29%
• Plasma Enhanced Chemical Vapour Deposition 12%
• Nitride 9%
• Quantum Dot 9%
• Annealing 8%
• Wavelength 7%
• Shape 6%

Physics & Astronomy

• stoichiometry 59%
• photoluminescence 43%
• light emission 14%
• silicon 12%
• quantum dots 11%
• silicon nitrides 7%
• gas flow 7%
• vapor deposition 5%
• optimization 5%
• annealing 4%
• defects 4%
• excitation 3%
• wavelengths 3%