TY - JOUR
T1 - Light emitting mechanisms dependent on stoichiometry of Si-rich-SiNx films grown by PECVD
AU - Torchynska, T. V.
AU - Casas Espinola, J. L.
AU - Jaramillo Gomez, J. A.
AU - Bentosa Gutiérrez, J. A.
AU - Khomenkova, L.
AU - Slaoui, A.
N1 - Publisher Copyright:
© 2016, Springer Science+Business Media New York.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - Light emission and morphology of silicon-rich silicon nitride films grown by plasma-enhanced chemical vapor deposition were investigated versus film’s stoichiometry. The excess silicon content in the films was controlled varying the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. High-temperature annealing was employed to form the silicon quantum dots (QDs) and to enhance the photoluminescence (PL) in visible spectral range. The PL spectrum was found to be complex. The competition of five PL bands leads to the non-monotonous variation of total PL peak position in the range of 1.55–2.95 eV when the Si excess content increases. The shape of PL spectra depends also on an excitation light wavelength. It is shown that for the films fabricated with R ≤ 0.56 and R ≥ 0.67 the dominant contribution into PL spectra is given by native SiNx defects, whereas in the films obtained with R = 0.59–0.67 the Si-QDs form the main radiative channel. The highest PL intensity is detected in Si-rich SiNx films grown at R = 0.59–0.67 as well. PL mechanisms are discussed in terms of the contribution of different radiative channels in the light emission process that can show the ways for the optimization of SiNx light-emitting properties.
AB - Light emission and morphology of silicon-rich silicon nitride films grown by plasma-enhanced chemical vapor deposition were investigated versus film’s stoichiometry. The excess silicon content in the films was controlled varying the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. High-temperature annealing was employed to form the silicon quantum dots (QDs) and to enhance the photoluminescence (PL) in visible spectral range. The PL spectrum was found to be complex. The competition of five PL bands leads to the non-monotonous variation of total PL peak position in the range of 1.55–2.95 eV when the Si excess content increases. The shape of PL spectra depends also on an excitation light wavelength. It is shown that for the films fabricated with R ≤ 0.56 and R ≥ 0.67 the dominant contribution into PL spectra is given by native SiNx defects, whereas in the films obtained with R = 0.59–0.67 the Si-QDs form the main radiative channel. The highest PL intensity is detected in Si-rich SiNx films grown at R = 0.59–0.67 as well. PL mechanisms are discussed in terms of the contribution of different radiative channels in the light emission process that can show the ways for the optimization of SiNx light-emitting properties.
UR - http://www.scopus.com/inward/record.url?scp=84992110604&partnerID=8YFLogxK
U2 - 10.1007/s10854-016-5864-8
DO - 10.1007/s10854-016-5864-8
M3 - Artículo
SN - 0957-4522
VL - 28
SP - 6977
EP - 6981
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -