TY - JOUR
T1 - Impact of Ga and In co-doping on morphology, structure, and emission of ZnO nanocrystal films
AU - El Filali, Brahim
AU - Torchynska, Tetyana
AU - Polupan, Georgiy
AU - Andraca Adame, José Alberto
AU - Ramirez Garcia, Jorge Luis
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to The Materials Research Society.
PY - 2021/12
Y1 - 2021/12
N2 - The influence of Ga and In co-doping on morphology, crystal structure, photoluminescence (PL), and electrical resistivity has been studied in ZnO:Ga:In nanocrystal (NC) films. The films were deposited by ultrasonic spray pyrolysis on silicon substrates heated to 400 °C. A set of samples was prepared, where the In content was 1 at.%, but the Ga contents were varied in the range of 0.5–2.5 at.%. All films were annealed at 400 °C for 4 h in a nitrogen flow. ZnO:Ga:In NC films are characterized by the wurtzite crystal structures for all Ga concentrations. Non-monotonic variations in morphology, crystal lattice parameters, and the intensity of near band edge (NBE) emission have been detected in the films versus Ga contents. High-quality NC films with the wurtzite crystal structure, planar morphology, bright NBE emission, and the small intensity of defect related PL bands have been obtained for the 1.5 at.% Ga in the films. The reasons for the non-monotonic variation of the emission and structural parameters with Ga contents have been analyzed and discussed. Graphical abstract: [Figure not available: see fulltext.].
AB - The influence of Ga and In co-doping on morphology, crystal structure, photoluminescence (PL), and electrical resistivity has been studied in ZnO:Ga:In nanocrystal (NC) films. The films were deposited by ultrasonic spray pyrolysis on silicon substrates heated to 400 °C. A set of samples was prepared, where the In content was 1 at.%, but the Ga contents were varied in the range of 0.5–2.5 at.%. All films were annealed at 400 °C for 4 h in a nitrogen flow. ZnO:Ga:In NC films are characterized by the wurtzite crystal structures for all Ga concentrations. Non-monotonic variations in morphology, crystal lattice parameters, and the intensity of near band edge (NBE) emission have been detected in the films versus Ga contents. High-quality NC films with the wurtzite crystal structure, planar morphology, bright NBE emission, and the small intensity of defect related PL bands have been obtained for the 1.5 at.% Ga in the films. The reasons for the non-monotonic variation of the emission and structural parameters with Ga contents have been analyzed and discussed. Graphical abstract: [Figure not available: see fulltext.].
UR - http://www.scopus.com/inward/record.url?scp=85120304625&partnerID=8YFLogxK
U2 - 10.1557/s43580-021-00173-3
DO - 10.1557/s43580-021-00173-3
M3 - Artículo
AN - SCOPUS:85120304625
SN - 2059-8521
VL - 6
SP - 928
EP - 931
JO - MRS Advances
JF - MRS Advances
IS - 41-42
ER -