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High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th Hackbarth, B. Raynor
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3
Scopus
citations