Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

E. Ramirez-Garcia, N. Zerounian, F. Aniel, L. A. Valdez-Monroy, L. M. Rodriguez-Mendez, D. Valdez-Perez, M. C. Galaz-Larios, M. A. Enciso-Aguilar

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